Inventor
LIM JUN-HEE
KR42 patents
⚠️ This page may combine multiple inventors who share the name “LIM JUN-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
32 patentsUS10998301B2May 4, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD13 citations86
US10896711B2Jan 19, 2021
Memory device with memory cell structure including ferroelectric data storage layer, and a first gate and a second gate
SAMSUNG ELECTRONICS CO LTD9 citations86
US11088163B2Aug 10, 2021
Semiconductor devices including upper and lower selectors
SAMSUNG ELECTRONICS CO LTD6 citations84
US7982245B2Jul 19, 2011
Circuit with fuse/anti-fuse transistor with selectively damaged gate insulating layer
SAMSUNG ELECTRONICS CO LTD8 citations84
US7800970B2Sep 21, 2010
Sense amplifier and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US9082647B2Jul 14, 2015
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD10 citations83
US11729976B2Aug 15, 2023
Semiconductor devices including upper and lower selectors
SAMSUNG ELECTRONICS CO LTD2 citations73
US11056645B2Jul 6, 2021
Vertical memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US10763167B2Sep 1, 2020
Vertical semiconductor devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10685695B2Jun 16, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations73
US10319427B2Jun 11, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9240415B2Jan 19, 2016
Semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations72
US10685708B2Jun 16, 2020
Semiconductor device including volatile and non-volatile memory cells
SAMSUNG ELECTRONICS CO LTD4 citations71
US9196729B2Nov 24, 2015
Semiconductor device having buried channel array and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US9171670B2Oct 27, 2015
Capacitor structures having supporting patterns and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US12178046B2Dec 24, 2024
Semiconductor devices including upper and lower selectors
SAMSUNG ELECTRONICS CO LTD0 citations62
US11721684B2Aug 8, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11239249B2Feb 1, 2022
Vertical-type memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US7649380B2Jan 19, 2010
Logic circuits with electric field relaxation transistors and semiconductor devices having the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US11152390B2Oct 19, 2021
Vertical semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US9070701B2Jun 30, 2015
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations61
US9484203B2Nov 1, 2016
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations60
US10916543B2Feb 9, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations58
US11024642B2Jun 1, 2021
Vertical memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US10700092B2Jun 30, 2020
Vertical semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10367002B2Jul 30, 2019
Vertical semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10515962B2Dec 24, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations48
US11856772B2Dec 26, 2023
Nonvolatile memory device and method of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations45
US10861874B2Dec 8, 2020
Vertical semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations42
US10680011B2Jun 9, 2020
Vertical semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations42
US10636808B2Apr 28, 2020
Vertical memory device having an epitaxial layer in contact with a channel layer
SAMSUNG ELECTRONICS CO LTD0 citations41
US9269810B2Feb 23, 2016
Semiconductor device having wave gate
SAMSUNG ELECTRONICS CO LTD0 citations40
LG SEMICON CO LTD
5 patentsUS5985711ANov 16, 1999
Method of fabricating semiconductor device
LG SEMICON CO LTD23 citations92
US5712503AJan 27, 1998
Metal oxide semiconductor and method of making the same
LG SEMICON CO LTD33 citations92
US5552329ASep 3, 1996
Method of making metal oxide semiconductor transistors
LG SEMICON CO LTD34 citations92
US6090682AJul 18, 2000
Isolation film of semiconductor device and method for fabricating the same comprising a lower isolation film with a upper isolation film formed on top
LG SEMICON CO LTD12 citations74
US5780334AJul 14, 1998
Method of fabricating capacitor of semiconductor memory device
LG SEMICON CO LTD13 citations73