Inventor

TOMOMATSU YOSHIFUMI

JP25 patents

⚠️ This page may combine multiple inventors who share the name “TOMOMATSU YOSHIFUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOMOMATSU YOSHIFUMI

MITSUBISHI ELECTRIC CORP

Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device

Overcurrent control circuit of power semiconductor device

Field effect semiconductor device and its production method

Semiconductor device and method of manufacturing the same

Insulated gate semiconductor device

Insulated gate semiconductor device for realizing low gate capacity and a low short-circuit current

Field effect type semiconductor device and manufacturing method thereof

Semiconductor device and fabrication method thereof

Semiconductor device preventing recovery breakdown and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Power semiconductor device with temperature detector

Method of fabricating an insulated gate semiconductor device

Semiconductor device having stable breakdown voltage in wiring area

Insulated gate semiconductor device and method of fabricating same

Semiconductor device for preventing destruction during a turn-off state

Semiconductor device having an insulated gate bipolar transistor and a free wheel diode

Semiconductor device

Insulated gate bipolar semiconductor device transistor with a ladder shaped emitter

Manufacturing process of pn junction diode device and pn junction diode device

Insulated gate semiconductor device with improved short-circuit tolerance

Semiconductor device

Semiconductor device that facilitates a reduction in the occurrences of cracking in a semiconductor layer accompanying thermal stress

TAKAHASHI TETSUO

Semiconductor device

SUZUKI KENJI

Semiconductor device having an enlarged emitter electrode

NAKANO SEIYA

Semiconductor device