Inventor

SUH DONG-SEOK

KR34 patents

⚠️ This page may combine multiple inventors who share the name “SUH DONG-SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUH DONG-SEOK

SAMSUNG ELECTRONICS CO LTD

Phase change random access memory devices and methods of operating the same

Memory device using multi-layer with a graded resistance change

Storage nodes, phase change memory devices, and methods of manufacturing the same

Phase change memory devices and multi-bit operating methods for the same

Phase change memory devices and fabrication methods thereof

Phase change memory device having phase change material layer containing phase change nano particles

Phase change memory devices and fabrication methods thereof

Method of operating and structure of phase change random access memory (PRAM)

Phase change random access memory and method of operating the same

Storage node, phase change memory device and methods of operating and fabricating the same

Phase change material containing carbon, memory device including the phase change material, and method of operating the memory device

Phase-change random access memory and programming method

Phase-change RAM and method for fabricating the same

Phase change material layers and phase change memory devices including the same

Non-volatile memory device and method of operating the same

Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impurities

Phase-change ram and method for fabricating the same

Doped phase change material and pram including the same

Phase change memory devices and fabrication methods thereof

SUH DONG-SEOK

Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states

Vertical string phase change random access memory device

Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states

Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states

Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states

Storage node, phase change memory device and methods of operating and fabricating the same

Phase change random access memory and methods of manufacturing and operating same

Storage node, phase change memory device and methods of operating and fabricating the same

UNIV TEXAS

Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states

Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states

KIM DEOK-KEE

Resistive memory devices including vertical transistor arrays and related fabrication methods

Non-volatile memory device with data storage layer

LEE TAE YON

Sensor, method of operating the same, and system including the same

KIM SUK PIL

Sensor and method using the same

KIM YOUNG-KUK

Method of measuring a resistance of a resistive memory device