Inventor
TSAI MINGHSING
TW33 patents
⚠️ This page may combine multiple inventors who share the name “TSAI MINGHSING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
16 patentsUS7538434B2May 26, 2009
Copper interconnection with conductive polymer layer and method of forming the same
TAIWAN SEMICONDUCTOR MFG24 citations92
US6872627B2Mar 29, 2005
Selective formation of metal gate for dual gate oxide application
TAIWAN SEMICONDUCTOR MFG41 citations92
US7259463B2Aug 21, 2007
Damascene interconnect structure with cap layer
TAIWAN SEMICONDUCTOR MFG20 citations90
US7423347B2Sep 9, 2008
In-situ deposition for cu hillock suppression
TAIWAN SEMICONDUCTOR MFG7 citations74
US6555474B1Apr 29, 2003
Method of forming a protective layer included in metal filled semiconductor features
TAIWAN SEMICONDUCTOR MFG7 citations73
US8975187B2Mar 10, 2015
Stress-controlled formation of tin hard mask
TAIWAN SEMICONDUCTOR MFG2 citations63
US7446047B2Nov 4, 2008
Metal structure with sidewall passivation and method
TAIWAN SEMICONDUCTOR MFG5 citations63
US9214383B2Dec 15, 2015
Method of semiconductor integrated circuit fabrication
TAIWAN SEMICONDUCTOR MFG3 citations62
US7413976B2Aug 19, 2008
Uniform passivation method for conductive features
TAIWAN SEMICONDUCTOR MFG4 citations62
US7332435B2Feb 19, 2008
Silicide structure for ultra-shallow junction for MOS devices
TAIWAN SEMICONDUCTOR MFG3 citations62
US6995089B2Feb 7, 2006
Method to remove copper without pattern density effect
TAIWAN SEMICONDUCTOR MFG2 citations62
US9142450B2Sep 22, 2015
Interconnect structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG0 citations52
US7659198B2Feb 9, 2010
In-situ deposition for Cu hillock suppression
TAIWAN SEMICONDUCTOR MFG1 citations52
US8980745B1Mar 17, 2015
Interconnect structures and methods of forming same
TAIWAN SEMICONDUCTOR MFG1 citations51
US7771579B2Aug 10, 2010
Electro chemical plating additives for improving stress and leveling effect
TAIWAN SEMICONDUCTOR MFG0 citations51
US7483258B2Jan 27, 2009
MIM capacitor in a copper damascene interconnect
TAIWAN SEMICONDUCTOR MFG1 citations51
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS10714383B2Jul 14, 2020
Interconnect structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9892960B2Feb 13, 2018
Interconnect structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9401329B2Jul 26, 2016
Interconnect structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11535950B2Dec 27, 2022
Electro-plating and apparatus for performing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10290538B2May 14, 2019
Interconnect structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9518334B2Dec 13, 2016
Electro-plating and apparatus for performing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10985054B2Apr 20, 2021
Interconnect structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10508356B2Dec 17, 2019
Electro-plating and apparatus for performing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52