Inventor
MATSUZAWA HIRONOBU
JP17 patents
⚠️ This page may combine multiple inventors who share the name “MATSUZAWA HIRONOBU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TDK CORP
6 patentsUS9824701B2Nov 21, 2017
Microwave assisted magnetic recording head with spin torque oscillator corner angle relationship, head gimbal assembly, and magnetic recording device
TDK CORP35 citations94
US8345390B2Jan 1, 2013
Magnetoresistive effect element in CPP-type structure and magnetic disk device
TDK CORP6 citations73
US8031444B2Oct 4, 2011
Magnetoresistive device of the CPP type, and magnetic disk system
TDK CORP6 citations63
US8029853B2Oct 4, 2011
Fabrication process for magnetoresistive devices of the CPP type
TDK CORP2 citations63
US8379350B2Feb 19, 2013
CPP-type magnetoresistive element including spacer layer
TDK CORP4 citations62
US7881021B2Feb 1, 2011
CPP type magnetoresistive device with biasing arrangement for ferromagnetic layers having respective magnetizations orthogonal to one another, and magnetic disk system using same
TDK CORP3 citations62
HARA SHINJI
3 patentsUS8274764B2Sep 25, 2012
Magneto-resistive effect element provided with GaN spacer layer
HARA SHINJI6 citations73
US8331063B2Dec 11, 2012
Magnetoresistive effect element in CPP-type structure and magnetic disk device
HARA SHINJI4 citations62
US8194364B2Jun 5, 2012
Magnetoresistive effect element in CPP-type structure including ferromagnetic layer configured with CoFe system alloy and magnetic disk device therewith
HARA SHINJI3 citations62
CHOU TSUTOMU
3 patentsUS8441763B2May 14, 2013
Magneto-resistive effect element having spacer layer with thin central portion
CHOU TSUTOMU2 citations62
US8405935B2Mar 26, 2013
Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and nonmagnetic layer
CHOU TSUTOMU2 citations62
US8970995B2Mar 3, 2015
Magnetoresistance effect element having layer containing Zn at the interface between magnetic layer and non-magnetic intermediate layer
CHOU TSUTOMU0 citations41
MATSUZAWA HIRONOBU
2 patentsUS8432645B2Apr 30, 2013
Magneto-resistive effect element, magnetic head, magnetic head slider, head gimbal assembly and hard disk drive apparatus
MATSUZAWA HIRONOBU8 citations82
US8147994B2Apr 3, 2012
Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same
MATSUZAWA HIRONOBU7 citations82
KOIKE HAYATO
2 patentsUS8564911B2Oct 22, 2013
Magneto-resistive effect element having spacer layer including gallium oxide layer with metal element
KOIKE HAYATO3 citations60
US8498083B2Jul 30, 2013
Magneto-resistive effect element having spacer layer containing gallium oxide, partially oxidized copper
KOIKE HAYATO2 citations60