Inventor
JEON WOOCHUL
KR31 patents
⚠️ This page may combine multiple inventors who share the name “JEON WOOCHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR COMPONENTS IND LLC
19 patentsUS10312359B2Jun 4, 2019
Guard rings for cascode gallium nitride devices
SEMICONDUCTOR COMPONENTS IND LLC2 citations73
US9842920B1Dec 12, 2017
Gallium nitride semiconductor device with isolated fingers
SEMICONDUCTOR COMPONENTS IND LLC6 citations73
US11769807B2Sep 26, 2023
Lateral transistor with extended source finger contact
SEMICONDUCTOR COMPONENTS IND LLC2 citations72
US9754931B2Sep 5, 2017
Circuit and an integrated circuit including a transistor and another component coupled thereto
SEMICONDUCTOR COMPONENTS IND LLC2 citations72
US10937781B1Mar 2, 2021
Electronic device including a protection circuit
SEMICONDUCTOR COMPONENTS IND LLC6 citations67
US10978581B2Apr 13, 2021
Guard rings for cascode gallium nitride devices
SEMICONDUCTOR COMPONENTS IND LLC0 citations62
US10854718B2Dec 1, 2020
Method of forming a semiconductor device
SEMICONDUCTOR COMPONENTS IND LLC1 citations62
US10797153B2Oct 6, 2020
Process of forming an electronic device including an access region
SEMICONDUCTOR COMPONENTS IND LLC1 citations62
US10069002B2Sep 4, 2018
Bond-over-active circuity gallium nitride devices
SEMICONDUCTOR COMPONENTS IND LLC1 citations62
US11538931B2Dec 27, 2022
High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance
SEMICONDUCTOR COMPONENTS IND LLC0 citations59
US10811514B2Oct 20, 2020
Electronic device including an enhancement-mode HEMT and a method of using the same
SEMICONDUCTOR COMPONENTS IND LLC0 citations52
US10707203B2Jul 7, 2020
Cascode semiconductor device structure and method therefor
SEMICONDUCTOR COMPONENTS IND LLC0 citations52
US10559678B2Feb 11, 2020
Cascode circuit having a gate of a low-side transistor coupled to a high-side transistor
SEMICONDUCTOR COMPONENTS IND LLC0 citations52
US10431525B2Oct 1, 2019
Bond-over-active circuity gallium nitride devices
SEMICONDUCTOR COMPONENTS IND LLC0 citations52
US10217737B2Feb 26, 2019
Cascode semiconductor device structure and method therefor
SEMICONDUCTOR COMPONENTS IND LLC0 citations52
US9985022B2May 29, 2018
Electronic device including a cascode circuit having principal drive and bypass transistors
SEMICONDUCTOR COMPONENTS IND LLC0 citations52
US9966462B2May 8, 2018
Guard rings for cascode gallium nitride devices
SEMICONDUCTOR COMPONENTS IND LLC0 citations52
US9947654B2Apr 17, 2018
Electronic device including a transistor and a field electrode
SEMICONDUCTOR COMPONENTS IND LLC1 citations52
US9741711B2Aug 22, 2017
Cascode semiconductor device structure and method therefor
SEMICONDUCTOR COMPONENTS IND LLC0 citations52
SAMSUNG ELECTRONICS CO LTD
5 patentsUS12199174B2Jan 14, 2025
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations63
US12426294B2Sep 23, 2025
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD0 citations62
US12113110B2Oct 8, 2024
Nitride semiconductor device with field effect gate
SAMSUNG ELECTRONICS CO LTD0 citations62
US12464793B2Nov 4, 2025
Nitride semiconductor buffer structure and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12317536B2May 27, 2025
Semiconductor device and power switching system including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
SEMICONDUCTOR COMPONENTS IND
3 patentsUS10741682B2Aug 11, 2020
High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance
SEMICONDUCTOR COMPONENTS IND5 citations80
US10749019B2Aug 18, 2020
Circuit and electronic device including an enhancement-mode transistor
SEMICONDUCTOR COMPONENTS IND4 citations73
US10741653B2Aug 11, 2020
Bond-over-active circuity gallium nitride devices
SEMICONDUCTOR COMPONENTS IND0 citations52