Inventor
SHIMIZU KAZUHIRO
JP117 patents
⚠️ This page may combine multiple inventors who share the name “SHIMIZU KAZUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
31 patentsUS6555427B1Apr 29, 2003
Non-volatile semiconductor memory device and manufacturing method thereof
TOSHIBA KK138 citations99
US6353242B1Mar 5, 2002
Nonvolatile semiconductor memory
TOSHIBA KK127 citations99
US6342715B1Jan 29, 2002
Nonvolatile semiconductor memory device
TOSHIBA KK216 citations99
US6340611B1Jan 22, 2002
Nonvolatile semiconductor memory device
TOSHIBA KK160 citations99
US6265739B1Jul 24, 2001
Non-volatile semiconductor memory device and its manufacturing method
TOSHIBA KK120 citations99
US5889304AMar 30, 1999
Nonvolatile semiconductor memory device
TOSHIBA KK165 citations99
US6191975B1Feb 20, 2001
Non-volatile NAND type semiconductor memory device with stacked gate memory cells and a stacked gate select transistor
TOSHIBA KK132 citations98
US6160297ADec 12, 2000
Semiconductor memory device having a first source line arranged between a memory cell string and bit lines in the direction crossing the bit lines and a second source line arranged in parallel to the bit lines
TOSHIBA KK119 citations98
US6057580AMay 2, 2000
Semiconductor memory device having shallow trench isolation structure
TOSHIBA KK91 citations98
US5946230AAug 31, 1999
Nonvolatile semiconductor memory device having the reliability of gate insulating film of memory cells enhanced and method for manufacturing the same
TOSHIBA KK101 citations98
US6818508B2Nov 16, 2004
Non-volatile semiconductor memory device and manufacturing method thereof
TOSHIBA KK66 citations96
US6784503B2Aug 31, 2004
Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
TOSHIBA KK39 citations96
US6512253B2Jan 28, 2003
Nonvolatile semiconductor memory
TOSHIBA KK45 citations96
US6258665B1Jul 10, 2001
Non-volatile semiconductor memory device and method for manufacturing the same
TOSHIBA KK46 citations96
US6240012B1May 29, 2001
Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
TOSHIBA KK22 citations96
US6115287ASep 5, 2000
Nonvolatile semiconductor memory device using SOI
TOSHIBA KK77 citations96
US7122432B2Oct 17, 2006
Non-volatile semiconductor memory device and manufacturing method thereof
TOSHIBA KK29 citations93
US7005345B2Feb 28, 2006
Non-volatile semiconductor memory device and its manufacturing method
TOSHIBA KK12 citations93
US6974979B2Dec 13, 2005
Nonvolatile semiconductor memory
TOSHIBA KK17 citations93
US6611010B2Aug 26, 2003
Semiconductor device
TOSHIBA KK22 citations93
US6495896B1Dec 17, 2002
Semiconductor integrated circuit device with high and low voltage wells
TOSHIBA KK29 citations93
US6472701B2Oct 29, 2002
Non-volatile semiconductor memory device and its manufacturing method
TOSHIBA KK15 citations93
US6157056ADec 5, 2000
Semiconductor memory device having a plurality of memory cell transistors arranged to constitute memory cell arrays
TOSHIBA KK38 citations93
US6049482AApr 11, 2000
Non-volatile semiconductor memory device
TOSHIBA KK43 citations93
US6828627B2Dec 7, 2004
Semiconductor device
TOSHIBA KK23 citations92
US6828624B1Dec 7, 2004
Nonvolatile semiconductor memory device covered with insulating film which is hard for an oxidizing agent to pass therethrough
TOSHIBA KK33 citations92
US6703669B1Mar 9, 2004
Semiconductor device having serially connected memory cell transistors provided between two current terminals
TOSHIBA KK23 citations92
US6534867B1Mar 18, 2003
Semiconductor device, semiconductor element and method for producing same
TOSHIBA KK34 citations92
US6462373B2Oct 8, 2002
Nonvolatile semiconductor memory device having tapered portion on side wall of charge accumulation layer
TOSHIBA KK27 citations92
US6060740AMay 9, 2000
Non-volatile semiconductor memory device and method for manufacturing the same
TOSHIBA KK40 citations92
US6943074B2Sep 13, 2005
Nonvolatile semiconductor memory device having a two-layer gate structure and method for manufacturing the same
TOSHIBA KK19 citations84
MITSUBISHI ELECTRIC CORP
8 patentsUS7327007B2Feb 5, 2008
Semiconductor device with high breakdown voltage
MITSUBISHI ELECTRIC CORP21 citations93
US7049850B2May 23, 2006
Semiconductor device with a voltage detecting device to prevent shoot-through phenomenon in first and second complementary switching devices
MITSUBISHI ELECTRIC CORP29 citations93
US6507085B2Jan 14, 2003
Semiconductor device comprising diode
MITSUBISHI ELECTRIC CORP30 citations93
US5894156AApr 13, 1999
Semiconductor device having a high breakdown voltage isolation region
MITSUBISHI ELECTRIC CORP46 citations93
US5889310AMar 30, 1999
Semiconductor device with high breakdown voltage island region
MITSUBISHI ELECTRIC CORP36 citations93
US7582946B2Sep 1, 2009
Semiconductor device with multi-trench separation region and method for producing the same
MITSUBISHI ELECTRIC CORP12 citations84
US7481885B2Jan 27, 2009
Semiconductor device manufacturing apparatus, semiconductor device manufacturing method and semiconductor device
MITSUBISHI ELECTRIC CORP8 citations84
US7408228B2Aug 5, 2008
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
MITSUBISHI ELECTRIC CORP10 citations84
YAZAKI CORP
2 patentsSONY CORP
2 patentsYAZAKI NORTH AMERICA
2 patentsSHIMIZU KAZUHIRO
2 patentsTERUMO CORP
1 patentYAZAKI NORTH AMERICA INC
1 patentNISSHO KK
1 patentShowing the top 50 of 117 patents by PatentIndex Score.