Inventor
ROOYACKERS RITA
BE16 patents
⚠️ This page may combine multiple inventors who share the name “ROOYACKERS RITA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IMEC INTER UNI MICRO ELECTR
5 patentsUS6607950B2Aug 19, 2003
MIS transistors with a metal gate and high-k dielectric and method of forming
IMEC INTER UNI MICRO ELECTR59 citations93
US6855605B2Feb 15, 2005
Semiconductor device with selectable gate thickness and method of manufacturing such devices
IMEC INTER UNI MICRO ELECTR38 citations91
US6255227B1Jul 3, 2001
Etching process of CoSi2 layers
IMEC INTER UNI MICRO ELECTR17 citations89
US7494902B2Feb 24, 2009
Method of fabricating a strained multi-gate transistor
IMEC INTER UNI MICRO ELECTR10 citations83
US7033941B2Apr 25, 2006
Method of producing semiconductor devices using chemical mechanical polishing
IMEC INTER UNI MICRO ELECTR0 citations41
IMEC VZW
5 patentsUS6153484ANov 28, 2000
Etching process of CoSi2 layers
IMEC VZW36 citations89
US9633891B2Apr 25, 2017
Method for forming a transistor structure comprising a fin-shaped channel structure
IMEC VZW4 citations72
US9608094B2Mar 28, 2017
Heterosection tunnel field-effect transistor (TFET)
IMEC VZW5 citations72
US9257539B2Feb 9, 2016
Method for manufacturing transistor and associated device
IMEC VZW3 citations72
US10236183B2Mar 19, 2019
Monolithic integration of semiconductor materials
IMEC VZW0 citations40
IMEC
4 patentsUS8034689B2Oct 11, 2011
Method for fabricating a semiconductor device and the semiconductor device made thereof
IMEC11 citations83
US7737008B2Jun 15, 2010
Method for making quantum dots
IMEC0 citations48
US9070720B2Jun 30, 2015
Tunnel field effect transistor device and method for making the device
IMEC0 citations39
US7799664B2Sep 21, 2010
Method for selective epitaxial growth of source/drain areas
IMEC0 citations39