Inventor
SPESSOT ALESSIO
BE19 patents
⚠️ This page may combine multiple inventors who share the name “SPESSOT ALESSIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IMEC VZW
8 patentsUS11488954B2Nov 1, 2022
Method of cointegrating semiconductor structures for different voltage transistors
IMEC VZW2 citations71
US11211404B2Dec 28, 2021
Memory devices based on ferroelectric field effect transistors
IMEC VZW0 citations61
US11251036B2Feb 15, 2022
Semiconductor devices and methods of manufacturing semiconductor devices
IMEC VZW1 citations59
US12164849B2Dec 10, 2024
System and method of simulating aging in device circuits
IMEC VZW0 citations49
US11374058B2Jun 28, 2022
Memory selector and memory device including same
IMEC VZW0 citations48
US11276606B2Mar 15, 2022
Integrated electronic circuit with airgaps
IMEC VZW0 citations48
US10439036B2Oct 8, 2019
Transistor device with reduced hot carrier injection effect
IMEC VZW0 citations35
US9531371B2Dec 27, 2016
Restoring OFF-state stress degradation of threshold voltage
IMEC VZW0 citations35
MICRON TECHNOLOGY INC
5 patentsUS9613695B2Apr 4, 2017
Methods, devices and systems using over-reset state in a memory cell
MICRON TECHNOLOGY INC12 citations84
US10431302B2Oct 1, 2019
Methods, articles, and devices for pulse adjustment to program a memory cell
MICRON TECHNOLOGY INC2 citations73
US10141052B2Nov 27, 2018
Methods, articles, and devices for pulse adjustment to program a memory cell
MICRON TECHNOLOGY INC3 citations73
US9711214B2Jul 18, 2017
Methods, articles and devices for pulse adjustments to program a memory cell
MICRON TECHNOLOGY INC2 citations73
US10803938B2Oct 13, 2020
Methods, articles, and devices for pulse adjustments to program a memory cell
MICRON TECHNOLOGY INC0 citations52
SPESSOT ALESSIO
3 patentsUS9218876B2Dec 22, 2015
Methods, articles and devices for pulse adjustments to program a memory cell
SPESSOT ALESSIO13 citations91
US9117519B2Aug 25, 2015
Methods, devices and systems using over-reset state in a memory cell
SPESSOT ALESSIO23 citations91
US8441861B2May 14, 2013
Self-check calibration of program or erase and verify process using memory cell distribution
SPESSOT ALESSIO5 citations72