Inventor
NAG JOYEETA
US25 patents
⚠️ This page may combine multiple inventors who share the name “NAG JOYEETA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
13 patentsUS10395984B2Aug 27, 2019
Self-aligned via interconnect structures
IBM22 citations92
US9455185B1Sep 27, 2016
Laser anneal of buried metallic interconnects including through silicon vias
IBM16 citations92
US9412654B1Aug 9, 2016
Graphene sacrificial deposition layer on beol copper liner-seed for mitigating queue-time issues between liner and plating step
IBM9 citations84
US9412658B2Aug 9, 2016
Constrained nanosecond laser anneal of metal interconnect structures
IBM7 citations83
US9472710B1Oct 18, 2016
Low-loss large-grain optical waveguide for interconnecting components integrated on a glass substrate
IBM5 citations73
US9373561B1Jun 21, 2016
Integrated circuit barrierless microfluidic channel
IBM3 citations73
US10727122B2Jul 28, 2020
Self-aligned via interconnect structures
IBM4 citations71
US11348832B2May 31, 2022
Self-aligned via interconnect structures
IBM0 citations60
US9784917B2Oct 10, 2017
Low-loss large-grain optical waveguide for interconnecting components integrated on a glass substrate
IBM1 citations52
US9620396B1Apr 11, 2017
Laser anneal of buried metallic interconnects including through silicon vias
IBM0 citations52
US9502325B2Nov 22, 2016
Integrated circuit barrierless microfluidic channel
IBM0 citations52
US9385062B1Jul 5, 2016
Integrated circuit barrierless microfluidic channel
IBM0 citations52
US9293365B2Mar 22, 2016
Hardmask removal for copper interconnects with tungsten contacts by chemical mechanical polishing
IBM0 citations51
SANDISK TECHNOLOGIES LLC
6 patentsUS11996462B2May 28, 2024
Ferroelectric field effect transistors having enhanced memory window and methods of making the same
SANDISK TECHNOLOGIES LLC2 citations73
US12563973B2Feb 24, 2026
Bonded memory devices and methods of making the same
SANDISK TECHNOLOGIES LLC0 citations62
US11545506B2Jan 3, 2023
Ferroelectric field effect transistors having enhanced memory window and methods of making the same
SANDISK TECHNOLOGIES LLC0 citations62
US12356627B2Jul 8, 2025
Memory device containing composition-controlled ferroelectric memory elements and method of making the same
SANDISK TECHNOLOGIES LLC0 citations61
US12362301B2Jul 15, 2025
Bonded memory devices and methods of making the same
SANDISK TECHNOLOGIES LLC0 citations52
US12363905B2Jul 15, 2025
Memory device containing composition-controlled ferroelectric memory elements and method of making the same
SANDISK TECHNOLOGIES LLC0 citations51
GLOBALFOUNDRIES INC
5 patentsUS9679810B1Jun 13, 2017
Integrated circuit having improved electromigration performance and method of forming same
GLOBALFOUNDRIES INC18 citations83
US9362230B1Jun 7, 2016
Methods to form conductive thin film structures
GLOBALFOUNDRIES INC2 citations63
US9431485B2Aug 30, 2016
Formation of finFET junction
GLOBALFOUNDRIES INC2 citations59
US9793216B2Oct 17, 2017
Fabrication of IC structure with metal plug
GLOBALFOUNDRIES INC0 citations40
US9748235B2Aug 29, 2017
Gate stack for integrated circuit structure and method of forming same
GLOBALFOUNDRIES INC0 citations38