P

Inventor

ORIMOTO TAKASHI

US44 patents
⚠️ This page may combine multiple inventors who share the name “ORIMOTO TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SANDISK CORP

18 patents
US7795080B2Sep 14, 2010

Methods of forming integrated circuit devices using composite spacer structures

SANDISK CORP37 citations93
US7732275B2Jun 8, 2010

Methods of forming NAND flash memory with fixed charge

SANDISK CORP17 citations93
US7615447B2Nov 10, 2009

Composite charge storage structure formation in non-volatile memory using etch stop technologies

SANDISK CORP17 citations93
US7592223B2Sep 22, 2009

Methods of fabricating non-volatile memory with integrated select and peripheral circuitry and post-isolation memory cell formation

SANDISK CORP17 citations93
US7582529B2Sep 1, 2009

Methods of fabricating non-volatile memory with integrated peripheral circuitry and pre-isolation memory cell formation

SANDISK CORP19 citations93
US7494870B2Feb 24, 2009

Methods of forming NAND memory with virtual channel

SANDISK CORP27 citations93
US7723186B2May 25, 2010

Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer

SANDISK CORP26 citations92
US7736973B2Jun 15, 2010

Non-volatile memory arrays having dual control gate cell structures and a thick control gate dielectric and methods of forming

SANDISK CORP13 citations84
US7704832B2Apr 27, 2010

Integrated non-volatile memory and peripheral circuitry fabrication

SANDISK CORP18 citations84
US7592225B2Sep 22, 2009

Methods of forming spacer patterns using assist layer for high density semiconductor devices

SANDISK CORP13 citations84
US7495282B2Feb 24, 2009

NAND memory with virtual channel

SANDISK CORP10 citations84
US7960266B2Jun 14, 2011

Spacer patterns using assist layer for high density semiconductor devices

SANDISK CORP3 citations63
US7939407B2May 10, 2011

Composite charge storage structure formation in non-volatile memory using etch stop technologies

SANDISK CORP4 citations63
US7915664B2Mar 29, 2011

Non-volatile memory with sidewall channels and raised source/drain regions

SANDISK CORP5 citations63
US7888210B2Feb 15, 2011

Non-volatile memory fabrication and isolation for composite charge storage structures

SANDISK CORP5 citations63
US7807529B2Oct 5, 2010

Lithographically space-defined charge storage regions in non-volatile memory

SANDISK CORP5 citations63
US7773403B2Aug 10, 2010

Spacer patterns using assist layer for high density semiconductor devices

SANDISK CORP2 citations63
US7619926B2Nov 17, 2009

NAND flash memory with fixed charge

SANDISK CORP4 citations63

CASIO COMPUTER CO LTD

5 patents

PURAYATH VINOD ROBERT

5 patents

SANDISK TECHNOLOGIES LLC

3 patents

SANDISK TECHNOLOGIES INC

3 patents

MATAMIS GEORGE

2 patents

SPANSION LLC

2 patents

TOYOTA MOTOR CO LTD

1 patent

FANG SHENQING

1 patent

ORIMOTO TAKASHI

1 patent

PSIQUANTUM CORP

1 patent

DING MENG

1 patent

PACIFIC BIOSCIENCES CALIFORNIA INC

1 patent