Inventor
ORIMOTO TAKASHI
US44 patents
⚠️ This page may combine multiple inventors who share the name “ORIMOTO TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK CORP
18 patentsUS7795080B2Sep 14, 2010
Methods of forming integrated circuit devices using composite spacer structures
SANDISK CORP37 citations93
US7732275B2Jun 8, 2010
Methods of forming NAND flash memory with fixed charge
SANDISK CORP17 citations93
US7615447B2Nov 10, 2009
Composite charge storage structure formation in non-volatile memory using etch stop technologies
SANDISK CORP17 citations93
US7592223B2Sep 22, 2009
Methods of fabricating non-volatile memory with integrated select and peripheral circuitry and post-isolation memory cell formation
SANDISK CORP17 citations93
US7582529B2Sep 1, 2009
Methods of fabricating non-volatile memory with integrated peripheral circuitry and pre-isolation memory cell formation
SANDISK CORP19 citations93
US7494870B2Feb 24, 2009
Methods of forming NAND memory with virtual channel
SANDISK CORP27 citations93
US7723186B2May 25, 2010
Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer
SANDISK CORP26 citations92
US7736973B2Jun 15, 2010
Non-volatile memory arrays having dual control gate cell structures and a thick control gate dielectric and methods of forming
SANDISK CORP13 citations84
US7704832B2Apr 27, 2010
Integrated non-volatile memory and peripheral circuitry fabrication
SANDISK CORP18 citations84
US7592225B2Sep 22, 2009
Methods of forming spacer patterns using assist layer for high density semiconductor devices
SANDISK CORP13 citations84
US7495282B2Feb 24, 2009
NAND memory with virtual channel
SANDISK CORP10 citations84
US7960266B2Jun 14, 2011
Spacer patterns using assist layer for high density semiconductor devices
SANDISK CORP3 citations63
US7939407B2May 10, 2011
Composite charge storage structure formation in non-volatile memory using etch stop technologies
SANDISK CORP4 citations63
US7915664B2Mar 29, 2011
Non-volatile memory with sidewall channels and raised source/drain regions
SANDISK CORP5 citations63
US7888210B2Feb 15, 2011
Non-volatile memory fabrication and isolation for composite charge storage structures
SANDISK CORP5 citations63
US7807529B2Oct 5, 2010
Lithographically space-defined charge storage regions in non-volatile memory
SANDISK CORP5 citations63
US7773403B2Aug 10, 2010
Spacer patterns using assist layer for high density semiconductor devices
SANDISK CORP2 citations63
US7619926B2Nov 17, 2009
NAND flash memory with fixed charge
SANDISK CORP4 citations63
CASIO COMPUTER CO LTD
5 patentsUS5701580ADec 23, 1997
Information providing systems and portable electronic devices
CASIO COMPUTER CO LTD61 citations95
US5576650ANov 19, 1996
Reset circuit of electronic device
CASIO COMPUTER CO LTD31 citations92
US5850231ADec 15, 1998
Electronic device having ferroelectric memory
CASIO COMPUTER CO LTD36 citations90
US5778205AJul 7, 1998
Data communication system and portable data processing terminal used therein
CASIO COMPUTER CO LTD12 citations74
US4618146AOct 21, 1986
Video game apparatus allowing for a variation in playing sequence
CASIO COMPUTER CO LTD5 citations63
PURAYATH VINOD ROBERT
5 patentsUS8193055B1Jun 5, 2012
Method of forming memory with floating gates including self-aligned metal nanodots using a polymer solution
PURAYATH VINOD ROBERT9 citations84
US8097498B2Jan 17, 2012
Damascene method of making a nonvolatile memory device
PURAYATH VINOD ROBERT16 citations84
US8263465B2Sep 11, 2012
Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer
PURAYATH VINOD ROBERT2 citations62
US8222091B2Jul 17, 2012
Damascene method of making a nonvolatile memory device
PURAYATH VINOD ROBERT3 citations62
US8207036B2Jun 26, 2012
Method for forming self-aligned dielectric cap above floating gate
PURAYATH VINOD ROBERT4 citations62
SANDISK TECHNOLOGIES LLC
3 patentsUS10103169B1Oct 16, 2018
Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch process
SANDISK TECHNOLOGIES LLC70 citations98
US10297610B2May 21, 2019
Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same
SANDISK TECHNOLOGIES LLC26 citations93
US10403639B2Sep 3, 2019
Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same
SANDISK TECHNOLOGIES LLC10 citations82
SANDISK TECHNOLOGIES INC
3 patentsUS8383479B2Feb 26, 2013
Integrated nanostructure-based non-volatile memory fabrication
SANDISK TECHNOLOGIES INC33 citations93
US8946022B2Feb 3, 2015
Integrated nanostructure-based non-volatile memory fabrication
SANDISK TECHNOLOGIES INC4 citations73
US8030160B2Oct 4, 2011
Methods of forming NAND flash memory with fixed charge
SANDISK TECHNOLOGIES INC3 citations63