Inventor
CHIEN HENRY
US80 patents
⚠️ This page may combine multiple inventors who share the name “CHIEN HENRY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES INC
28 patentsUS9659956B1May 23, 2017
Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolation
SANDISK TECHNOLOGIES INC108 citations98
US9530790B1Dec 27, 2016
Three-dimensional memory device containing CMOS devices over memory stack structures
SANDISK TECHNOLOGIES INC159 citations98
US9502471B1Nov 22, 2016
Multi tier three-dimensional memory devices including vertically shared bit lines
SANDISK TECHNOLOGIES INC116 citations98
US9449982B2Sep 20, 2016
Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks
SANDISK TECHNOLOGIES INC71 citations98
US9356031B2May 31, 2016
Three dimensional NAND string memory devices with voids enclosed between control gate electrodes
SANDISK TECHNOLOGIES INC61 citations98
US9252151B2Feb 2, 2016
Three dimensional NAND device with birds beak containing floating gates and method of making thereof
SANDISK TECHNOLOGIES INC60 citations98
US9230987B2Jan 5, 2016
Multilevel memory stack structure and methods of manufacturing the same
SANDISK TECHNOLOGIES INC126 citations98
US9230974B1Jan 5, 2016
Methods of selective removal of blocking dielectric in NAND memory strings
SANDISK TECHNOLOGIES INC56 citations98
US8946023B2Feb 3, 2015
Method of making a vertical NAND device using sequential etching of multilayer stacks
SANDISK TECHNOLOGIES INC96 citations98
US8928061B2Jan 6, 2015
Three dimensional NAND device with silicide containing floating gates
SANDISK TECHNOLOGIES INC72 citations98
US8884357B2Nov 11, 2014
Vertical NAND and method of making thereof using sequential stack etching and landing pad
SANDISK TECHNOLOGIES INC106 citations98
US8461641B2Jun 11, 2013
Ultrahigh density vertical NAND memory device and method of making thereof
SANDISK TECHNOLOGIES INC42 citations98
US9728551B1Aug 8, 2017
Multi-tier replacement memory stack structure integration scheme
SANDISK TECHNOLOGIES INC78 citations97
US9728546B2Aug 8, 2017
3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same
SANDISK TECHNOLOGIES INC45 citations96
US9853043B2Dec 26, 2017
Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material
SANDISK TECHNOLOGIES INC49 citations94
US9620514B2Apr 11, 2017
3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same
SANDISK TECHNOLOGIES INC34 citations94
US9524976B2Dec 20, 2016
Method of integrating select gate source and memory hole for three-dimensional non-volatile memory device
SANDISK TECHNOLOGIES INC27 citations94
US9520406B2Dec 13, 2016
Method of making a vertical NAND device using sequential etching of multilayer stacks
SANDISK TECHNOLOGIES INC26 citations94
US9165940B2Oct 20, 2015
Three dimensional NAND device with silicide containing floating gates and method of making thereof
SANDISK TECHNOLOGIES INC36 citations94
US9099496B2Aug 4, 2015
Method of forming an active area with floating gate negative offset profile in FG NAND memory
SANDISK TECHNOLOGIES INC31 citations94
US9530785B1Dec 27, 2016
Three-dimensional memory devices having a single layer channel and methods of making thereof
SANDISK TECHNOLOGIES INC24 citations93
US9515080B2Dec 6, 2016
Vertical NAND and method of making thereof using sequential stack etching and landing pad
SANDISK TECHNOLOGIES INC20 citations93
US8383479B2Feb 26, 2013
Integrated nanostructure-based non-volatile memory fabrication
SANDISK TECHNOLOGIES INC33 citations93
US9524779B2Dec 20, 2016
Three dimensional vertical NAND device with floating gates
SANDISK TECHNOLOGIES INC21 citations92
US9870945B2Jan 16, 2018
Crystalline layer stack for forming conductive layers in a three-dimensional memory structure
SANDISK TECHNOLOGIES INC18 citations84
US9716101B2Jul 25, 2017
Forming 3D memory cells after word line replacement
SANDISK TECHNOLOGIES INC8 citations84
US9698149B2Jul 4, 2017
Non-volatile memory with flat cell structures and air gap isolation
SANDISK TECHNOLOGIES INC9 citations84
US9666590B2May 30, 2017
High stack 3D memory and method of making
SANDISK TECHNOLOGIES INC17 citations84
SANDISK CORP
14 patentsUS6898121B2May 24, 2005
Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
SANDISK CORP134 citations99
US5534456AJul 9, 1996
Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with sidewall spacers
SANDISK CORP171 citations99
US6936887B2Aug 30, 2005
Non-volatile memory cells utilizing substrate trenches
SANDISK CORP101 citations98
US5756385AMay 26, 1998
Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
SANDISK CORP107 citations98
US6894930B2May 17, 2005
Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
SANDISK CORP51 citations96
US5747359AMay 5, 1998
Method of patterning polysilicon layers on substrate
SANDISK CORP75 citations96
US5654217AAug 5, 1997
Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
SANDISK CORP63 citations96
US7795080B2Sep 14, 2010
Methods of forming integrated circuit devices using composite spacer structures
SANDISK CORP37 citations93
US7732275B2Jun 8, 2010
Methods of forming NAND flash memory with fixed charge
SANDISK CORP17 citations93
US7504686B2Mar 17, 2009
Self-aligned non-volatile memory cell
SANDISK CORP21 citations93
US7494870B2Feb 24, 2009
Methods of forming NAND memory with virtual channel
SANDISK CORP27 citations93
US7170786B2Jan 30, 2007
Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
SANDISK CORP29 citations93
US7105406B2Sep 12, 2006
Self aligned non-volatile memory cell and process for fabrication
SANDISK CORP27 citations93
US7615445B2Nov 10, 2009
Methods of reducing coupling between floating gates in nonvolatile memory
SANDISK CORP19 citations92
ALSMEIER JOHANN
2 patentsSANDISK TECHNOLOGIES LLC
2 patentsSANDISK 3D LLC
1 patentPURAYATH VINOD ROBERT
1 patentMATAMIS GEORGE
1 patentMONSANTO TECHNOLOGY LLC
1 patentShowing the top 50 of 80 patents by PatentIndex Score.