P

Inventor

CHIEN HENRY

US80 patents
⚠️ This page may combine multiple inventors who share the name “CHIEN HENRY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SANDISK TECHNOLOGIES INC

28 patents
US9659956B1May 23, 2017

Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolation

SANDISK TECHNOLOGIES INC108 citations98
US9530790B1Dec 27, 2016

Three-dimensional memory device containing CMOS devices over memory stack structures

SANDISK TECHNOLOGIES INC159 citations98
US9502471B1Nov 22, 2016

Multi tier three-dimensional memory devices including vertically shared bit lines

SANDISK TECHNOLOGIES INC116 citations98
US9449982B2Sep 20, 2016

Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks

SANDISK TECHNOLOGIES INC71 citations98
US9356031B2May 31, 2016

Three dimensional NAND string memory devices with voids enclosed between control gate electrodes

SANDISK TECHNOLOGIES INC61 citations98
US9252151B2Feb 2, 2016

Three dimensional NAND device with birds beak containing floating gates and method of making thereof

SANDISK TECHNOLOGIES INC60 citations98
US9230987B2Jan 5, 2016

Multilevel memory stack structure and methods of manufacturing the same

SANDISK TECHNOLOGIES INC126 citations98
US9230974B1Jan 5, 2016

Methods of selective removal of blocking dielectric in NAND memory strings

SANDISK TECHNOLOGIES INC56 citations98
US8946023B2Feb 3, 2015

Method of making a vertical NAND device using sequential etching of multilayer stacks

SANDISK TECHNOLOGIES INC96 citations98
US8928061B2Jan 6, 2015

Three dimensional NAND device with silicide containing floating gates

SANDISK TECHNOLOGIES INC72 citations98
US8884357B2Nov 11, 2014

Vertical NAND and method of making thereof using sequential stack etching and landing pad

SANDISK TECHNOLOGIES INC106 citations98
US8461641B2Jun 11, 2013

Ultrahigh density vertical NAND memory device and method of making thereof

SANDISK TECHNOLOGIES INC42 citations98
US9728551B1Aug 8, 2017

Multi-tier replacement memory stack structure integration scheme

SANDISK TECHNOLOGIES INC78 citations97
US9728546B2Aug 8, 2017

3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same

SANDISK TECHNOLOGIES INC45 citations96
US9853043B2Dec 26, 2017

Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material

SANDISK TECHNOLOGIES INC49 citations94
US9620514B2Apr 11, 2017

3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same

SANDISK TECHNOLOGIES INC34 citations94
US9524976B2Dec 20, 2016

Method of integrating select gate source and memory hole for three-dimensional non-volatile memory device

SANDISK TECHNOLOGIES INC27 citations94
US9520406B2Dec 13, 2016

Method of making a vertical NAND device using sequential etching of multilayer stacks

SANDISK TECHNOLOGIES INC26 citations94
US9165940B2Oct 20, 2015

Three dimensional NAND device with silicide containing floating gates and method of making thereof

SANDISK TECHNOLOGIES INC36 citations94
US9099496B2Aug 4, 2015

Method of forming an active area with floating gate negative offset profile in FG NAND memory

SANDISK TECHNOLOGIES INC31 citations94
US9530785B1Dec 27, 2016

Three-dimensional memory devices having a single layer channel and methods of making thereof

SANDISK TECHNOLOGIES INC24 citations93
US9515080B2Dec 6, 2016

Vertical NAND and method of making thereof using sequential stack etching and landing pad

SANDISK TECHNOLOGIES INC20 citations93
US8383479B2Feb 26, 2013

Integrated nanostructure-based non-volatile memory fabrication

SANDISK TECHNOLOGIES INC33 citations93
US9524779B2Dec 20, 2016

Three dimensional vertical NAND device with floating gates

SANDISK TECHNOLOGIES INC21 citations92
US9870945B2Jan 16, 2018

Crystalline layer stack for forming conductive layers in a three-dimensional memory structure

SANDISK TECHNOLOGIES INC18 citations84
US9716101B2Jul 25, 2017

Forming 3D memory cells after word line replacement

SANDISK TECHNOLOGIES INC8 citations84
US9698149B2Jul 4, 2017

Non-volatile memory with flat cell structures and air gap isolation

SANDISK TECHNOLOGIES INC9 citations84
US9666590B2May 30, 2017

High stack 3D memory and method of making

SANDISK TECHNOLOGIES INC17 citations84

SANDISK CORP

14 patents
US6898121B2May 24, 2005

Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND

SANDISK CORP134 citations99
US5534456AJul 9, 1996

Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with sidewall spacers

SANDISK CORP171 citations99
US6936887B2Aug 30, 2005

Non-volatile memory cells utilizing substrate trenches

SANDISK CORP101 citations98
US5756385AMay 26, 1998

Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers

SANDISK CORP107 citations98
US6894930B2May 17, 2005

Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND

SANDISK CORP51 citations96
US5747359AMay 5, 1998

Method of patterning polysilicon layers on substrate

SANDISK CORP75 citations96
US5654217AAug 5, 1997

Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers

SANDISK CORP63 citations96
US7795080B2Sep 14, 2010

Methods of forming integrated circuit devices using composite spacer structures

SANDISK CORP37 citations93
US7732275B2Jun 8, 2010

Methods of forming NAND flash memory with fixed charge

SANDISK CORP17 citations93
US7504686B2Mar 17, 2009

Self-aligned non-volatile memory cell

SANDISK CORP21 citations93
US7494870B2Feb 24, 2009

Methods of forming NAND memory with virtual channel

SANDISK CORP27 citations93
US7170786B2Jan 30, 2007

Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND

SANDISK CORP29 citations93
US7105406B2Sep 12, 2006

Self aligned non-volatile memory cell and process for fabrication

SANDISK CORP27 citations93
US7615445B2Nov 10, 2009

Methods of reducing coupling between floating gates in nonvolatile memory

SANDISK CORP19 citations92

ALSMEIER JOHANN

2 patents

SANDISK TECHNOLOGIES LLC

2 patents

SANDISK 3D LLC

1 patent

PURAYATH VINOD ROBERT

1 patent

MATAMIS GEORGE

1 patent

MONSANTO TECHNOLOGY LLC

1 patent

Showing the top 50 of 80 patents by PatentIndex Score.