Inventor
MATAMIS GEORGE
US113 patents
⚠️ This page may combine multiple inventors who share the name “MATAMIS GEORGE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES INC
30 patentsUS9397046B1Jul 19, 2016
Fluorine-free word lines for three-dimensional memory devices
SANDISK TECHNOLOGIES INC63 citations98
US9356031B2May 31, 2016
Three dimensional NAND string memory devices with voids enclosed between control gate electrodes
SANDISK TECHNOLOGIES INC61 citations98
US9252151B2Feb 2, 2016
Three dimensional NAND device with birds beak containing floating gates and method of making thereof
SANDISK TECHNOLOGIES INC60 citations98
US9230974B1Jan 5, 2016
Methods of selective removal of blocking dielectric in NAND memory strings
SANDISK TECHNOLOGIES INC56 citations98
US9159739B2Oct 13, 2015
Floating gate ultrahigh density vertical NAND flash memory
SANDISK TECHNOLOGIES INC70 citations98
US8928061B2Jan 6, 2015
Three dimensional NAND device with silicide containing floating gates
SANDISK TECHNOLOGIES INC72 citations98
US8461641B2Jun 11, 2013
Ultrahigh density vertical NAND memory device and method of making thereof
SANDISK TECHNOLOGIES INC42 citations98
US9543318B1Jan 10, 2017
Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
SANDISK TECHNOLOGIES INC80 citations97
US9780182B2Oct 3, 2017
Molybdenum-containing conductive layers for control gate electrodes in a memory structure
SANDISK TECHNOLOGIES INC32 citations94
US9698223B2Jul 4, 2017
Memory device containing stress-tunable control gate electrodes
SANDISK TECHNOLOGIES INC26 citations94
US9691884B2Jun 27, 2017
Monolithic three dimensional NAND strings and methods of fabrication thereof
SANDISK TECHNOLOGIES INC41 citations94
US9679906B2Jun 13, 2017
Three-dimensional memory devices containing memory block bridges
SANDISK TECHNOLOGIES INC35 citations94
US9627399B2Apr 18, 2017
Three-dimensional memory device with metal and silicide control gates
SANDISK TECHNOLOGIES INC41 citations94
US9496419B2Nov 15, 2016
Ruthenium nucleation layer for control gate electrodes in a memory structure
SANDISK TECHNOLOGIES INC30 citations94
US9478558B2Oct 25, 2016
Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer
SANDISK TECHNOLOGIES INC43 citations94
US9379124B2Jun 28, 2016
Vertical floating gate NAND with selectively deposited ALD metal films
SANDISK TECHNOLOGIES INC24 citations94
US9305849B1Apr 5, 2016
Method of making a three dimensional NAND device
SANDISK TECHNOLOGIES INC47 citations94
US9236396B1Jan 12, 2016
Three dimensional NAND device and method of making thereof
SANDISK TECHNOLOGIES INC46 citations94
US9230983B1Jan 5, 2016
Metal word lines for three dimensional memory devices
SANDISK TECHNOLOGIES INC43 citations94
US9165940B2Oct 20, 2015
Three dimensional NAND device with silicide containing floating gates and method of making thereof
SANDISK TECHNOLOGIES INC36 citations94
US9530785B1Dec 27, 2016
Three-dimensional memory devices having a single layer channel and methods of making thereof
SANDISK TECHNOLOGIES INC24 citations93
US9484357B2Nov 1, 2016
Selective blocking dielectric formation in a three-dimensional memory structure
SANDISK TECHNOLOGIES INC28 citations93
US9305932B2Apr 5, 2016
Methods of making three dimensional NAND devices
SANDISK TECHNOLOGIES INC23 citations93
US8383479B2Feb 26, 2013
Integrated nanostructure-based non-volatile memory fabrication
SANDISK TECHNOLOGIES INC33 citations93
US9524779B2Dec 20, 2016
Three dimensional vertical NAND device with floating gates
SANDISK TECHNOLOGIES INC21 citations92
US8823075B2Sep 2, 2014
Select gate formation for nanodot flat cell
SANDISK TECHNOLOGIES INC21 citations92
US10128261B2Nov 13, 2018
Cobalt-containing conductive layers for control gate electrodes in a memory structure
SANDISK TECHNOLOGIES INC14 citations84
US9698149B2Jul 4, 2017
Non-volatile memory with flat cell structures and air gap isolation
SANDISK TECHNOLOGIES INC9 citations84
US9570460B2Feb 14, 2017
Spacer passivation for high-aspect ratio opening film removal and cleaning
SANDISK TECHNOLOGIES INC15 citations84
US9570455B2Feb 14, 2017
Metal word lines for three dimensional memory devices
SANDISK TECHNOLOGIES INC14 citations84
SANDISK CORP
10 patentsUS7795080B2Sep 14, 2010
Methods of forming integrated circuit devices using composite spacer structures
SANDISK CORP37 citations93
US7732275B2Jun 8, 2010
Methods of forming NAND flash memory with fixed charge
SANDISK CORP17 citations93
US7615447B2Nov 10, 2009
Composite charge storage structure formation in non-volatile memory using etch stop technologies
SANDISK CORP17 citations93
US7592223B2Sep 22, 2009
Methods of fabricating non-volatile memory with integrated select and peripheral circuitry and post-isolation memory cell formation
SANDISK CORP17 citations93
US7582529B2Sep 1, 2009
Methods of fabricating non-volatile memory with integrated peripheral circuitry and pre-isolation memory cell formation
SANDISK CORP19 citations93
US7504686B2Mar 17, 2009
Self-aligned non-volatile memory cell
SANDISK CORP21 citations93
US7494870B2Feb 24, 2009
Methods of forming NAND memory with virtual channel
SANDISK CORP27 citations93
US7105406B2Sep 12, 2006
Self aligned non-volatile memory cell and process for fabrication
SANDISK CORP27 citations93
US7723186B2May 25, 2010
Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer
SANDISK CORP26 citations92
US7615445B2Nov 10, 2009
Methods of reducing coupling between floating gates in nonvolatile memory
SANDISK CORP19 citations92
ALSMEIER JOHANN
2 patentsLAM RES CORP
2 patentsPURAYATH VINOD ROBERT
2 patentsSANDISK TECHNOLOGIES LLC
1 patentPACHAMUTHU JAYAVEL
1 patentSANDISK 3D LLC
1 patentMATAMIS GEORGE
1 patentShowing the top 50 of 113 patents by PatentIndex Score.