Inventor
PARK YOON-DONG
KR142 patents
⚠️ This page may combine multiple inventors who share the name “PARK YOON-DONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
35 patentsUS7622761B2Nov 24, 2009
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD247 citations99
US8009454B2Aug 30, 2011
Resistance random access memory device and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD67 citations98
US7626685B2Dec 1, 2009
Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors
SAMSUNG ELECTRONICS CO LTD58 citations98
US7910909B2Mar 22, 2011
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD50 citations94
US8017991B2Sep 13, 2011
Non-volatile memory device and methods of operating and fabricating the same
SAMSUNG ELECTRONICS CO LTD35 citations93
US7863672B2Jan 4, 2011
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD24 citations93
US7700935B2Apr 20, 2010
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD43 citations93
US7560344B2Jul 14, 2009
Semiconductor device having a pair of fins and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations93
US7514325B2Apr 7, 2009
Fin-FET having GAA structure and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD23 citations93
US7282759B2Oct 16, 2007
Memory device having serially connected resistance nodes
SAMSUNG ELECTRONICS CO LTD31 citations93
US8385122B2Feb 26, 2013
Non-volatile memory device having stacked structure, and memory card and electronic system including the same
SAMSUNG ELECTRONICS CO LTD18 citations92
US8035806B2Oct 11, 2011
Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor
SAMSUNG ELECTRONICS CO LTD20 citations92
US7352037B2Apr 1, 2008
Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions
SAMSUNG ELECTRONICS CO LTD32 citations92
US7345898B2Mar 18, 2008
Complementary nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD22 citations92
US8053302B2Nov 8, 2011
Non-volatile memory device and method of manufacturing same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7948024B2May 24, 2011
Multi-layered, vertically stacked non-volatile memory device and method of fabrication
SAMSUNG ELECTRONICS CO LTD16 citations84
US7932551B2Apr 26, 2011
Nonvolatile memory device and method of fabricating the same comprising a dual fin structure
SAMSUNG ELECTRONICS CO LTD11 citations84
US7929351B2Apr 19, 2011
Method for reducing lateral movement of charges and memory device thereof
SAMSUNG ELECTRONICS CO LTD10 citations84
US7911842B2Mar 22, 2011
Memory cell programming method and semiconductor device for simultaneously programming a plurality of memory block groups
SAMSUNG ELECTRONICS CO LTD10 citations84
US7885107B2Feb 8, 2011
Methods of programming non-volatile memory cells
SAMSUNG ELECTRONICS CO LTD7 citations84
US7855908B2Dec 21, 2010
Information storage devices using magnetic domain wall motion and methods of operating the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US7843727B2Nov 30, 2010
Memory device and data reading method
SAMSUNG ELECTRONICS CO LTD16 citations84
US7796432B2Sep 14, 2010
Non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7746702B2Jun 29, 2010
Memory device and method for estimating characteristics of multi-bit programming
SAMSUNG ELECTRONICS CO LTD11 citations84
US7663166B2Feb 16, 2010
Wire-type semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US7652308B2Jan 26, 2010
Semiconductor device having gate-all-around structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7622765B2Nov 24, 2009
Non-volatile memory device and a method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7492635B2Feb 17, 2009
NOR-type hybrid multi-bit non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US7436704B2Oct 14, 2008
Non-volatile memory devices and method thereof
SAMSUNG ELECTRONICS CO LTD14 citations84
US7419859B2Sep 2, 2008
Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions
SAMSUNG ELECTRONICS CO LTD13 citations84
US7400027B2Jul 15, 2008
Nonvolatile memory device having two or more resistance elements and methods of forming and using the same
SAMSUNG ELECTRONICS CO LTD18 citations84
US7372757B2May 13, 2008
Magnetic memory device with moving magnetic domain walls
SAMSUNG ELECTRONICS CO LTD9 citations84
US7361554B2Apr 22, 2008
Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device
SAMSUNG ELECTRONICS CO LTD15 citations84
US7297997B2Nov 20, 2007
Semiconductor memory device with dual storage node and fabricating and operating methods thereof
SAMSUNG ELECTRONICS CO LTD14 citations84
US7829932B2Nov 9, 2010
Semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations83
JIN YOUNG GU
2 patentsFOSSUM ERIC R
2 patentsCHO KYOUNG LAE
2 patentsWANG YIBING
2 patentsFOSSUM ERIC
1 patentJI HO-CHUL
1 patentCHOI SANG-JUN
1 patentOVSIANNIKOV ILIA
1 patentJIN YOUNG-GU
1 patentSAMSUNG ELECRONICS CO LTD
1 patentLEE TAE-YON
1 patentShowing the top 50 of 142 patents by PatentIndex Score.