Inventor
RAHMAN TOFIZUR
US20 patents
Patents
20 patentsUS11476412B2Oct 18, 2022
Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
INTEL CORP2 citations73
US10411068B2Sep 10, 2019
Electrical contacts for magnetoresistive random access memory devices
INTEL CORP3 citations73
US11276730B2Mar 15, 2022
Spin orbit torque memory devices and methods of fabrication
INTEL CORP3 citations72
US11062752B2Jul 13, 2021
Spin orbit torque memory devices and methods of fabrication
INTEL CORP5 citations72
US11367749B2Jun 21, 2022
Spin orbit torque (SOT) memory devices and their methods of fabrication
INTEL CORP3 citations71
US11063088B2Jul 13, 2021
Magnetic memory devices and methods of fabrication
INTEL CORP3 citations69
US11594673B2Feb 28, 2023
Two terminal spin orbit memory devices and methods of fabrication
INTEL CORP0 citations62
US11508903B2Nov 22, 2022
Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance
INTEL CORP0 citations62
US11476408B2Oct 18, 2022
Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabrication
INTEL CORP0 citations62
US11362263B2Jun 14, 2022
Spin orbit torque (SOT) memory devices and methods of fabrication
INTEL CORP0 citations62
US11770979B2Sep 26, 2023
Conductive alloy layer in magnetic memory devices and methods of fabrication
INTEL CORP0 citations61
US11737368B2Aug 22, 2023
Magnetic memory devices and methods of fabrication
INTEL CORP0 citations61
US10943950B2Mar 9, 2021
Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabrication
INTEL CORP1 citations60
US11380838B2Jul 5, 2022
Magnetic memory devices with layered electrodes and methods of fabrication
INTEL CORP0 citations58
US11616192B2Mar 28, 2023
Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication
INTEL CORP0 citations57
US11411173B2Aug 9, 2022
Perpendicular spin transfer torque devices with improved retention and thermal stability
INTEL CORP0 citations57
US10580970B2Mar 3, 2020
PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability
INTEL CORP0 citations52
US11683939B2Jun 20, 2023
Spin orbit memory devices with dual electrodes, and methods of fabrication
INTEL CORP0 citations51
US11444237B2Sep 13, 2022
Spin orbit torque (SOT) memory devices and methods of fabrication
INTEL CORP0 citations50
US12543367B2Feb 3, 2026
Backside processing of fins in fin based transistor devices
INTEL CORP0 citations45