Inventor

HOSSAIN ZIA

US60 patents

⚠️ This page may combine multiple inventors who share the name “HOSSAIN ZIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HOSSAIN ZIA

SEMICONDUCTOR COMPONENTS IND LLC

Heterojunction semiconductor device having integrated clamping device

Insulated gate semiconductor device having a shield electrode structure and method

Termination structure for insulated gate semiconductor device and method

Method of forming a heterojunction semiconductor device having integrated clamping device

Insulated gate semiconductor device having a shield electrode structure and method

Semiconductor devices having super-junction trenches with conductive regions and method of making the same

Insulated gate semiconductor device having trench termination structure and method

Reverse recovery charge reduction in semiconductor devices

Reverse recovery charge reduction in semiconductor devices

Termination structure for insulated gate semiconductor device and method

Reverse recovery charge reduction in semiconductor devices

Termination structure for insulated gate semiconductor device and method

Method of forming a semiconductor device termination and structure therefor

Semiconductor device with enhanced mobility and method

Shielded gate trench power MOSFET with high-k shield dielectric

Electronic device including a transistor and a shield electrode

Electronic device including a transistor and a shield electrode

Electronic device including a transistor having structures with different characteristics

Electronic device including a transistor having structures with different characteristics

Electronic device having multi-thickness gate insulator

Cascode semiconductor device structure and method therefor

SEMICONDUCTOR COMPONENTS IND

Method of forming a super-junction semiconductor device

LDMOS transistor with enhanced termination region for high breakdown voltage with on-resistance

High voltage lateral FET structure with improved on resistance performance

Method of forming a semiconductor device and structure therefor

Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability

Method for manufacturing a high voltage MOSFET device with reduced on-resistance

High voltage metal oxide device with enhanced well region

Method of forming a semiconductor device including trench termination and trench structure therefor

Insulated gate semiconductor device having shield electrode structure

Semiconductor device having trench edge termination structure

Semiconductor structure with improved on resistance and breakdown voltage performance

Insulated gate semiconductor device having a shield electrode structure

Lateral FET structure with improved blocking voltage and on resistance performance and method

Process of forming an electronic device having a termination region including an insulating region

Low threshold compact MOS device with channel region formed by outdiffusion of two regions and method of making same

Electronic device having a termination region including an insulating region

Method of forming an integrated power device and structure

Semiconductor devices and method of making the same

HOSSAIN ZIA

Electronic device including a trench and a conductive structure therein and a process of forming the same

Method of making an insulated gate semiconductor device having a shield electrode structure

Semiconductor component and method of manufacture

GRIVNA GORDON M

Semiconductor device with enhanced mobility and method

VENKATRAMAN PRASAD

Semiconductor component and method of manufacture

SEMICONDUCTOR COMPONENT IND LLC

Semiconductor component and method of manufacture

QUDDUS MOHAMMED TANVIR

Schottky diode and method therefor

LOECHELT GARY H

Electronic device including a schottky contact

(unassigned)

LDMOS transistor with enhanced termination region for high breakdown voltage with low on-resistance

ROBB FRANCINE Y

Method of forming an integrated power device and structure

GUITART JAUME ROIG

Method of forming a semiconductor device termination and structure therefor