P

Inventor

CHANG CHIH-CHUNG

TW36 patents
⚠️ This page may combine multiple inventors who share the name “CHANG CHIH-CHUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

16 patents
US12113113B2Oct 8, 2024

Semiconductor device with a core-shell feature and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11888049B2Jan 30, 2024

Dielectric isolation structure for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12376339B2Jul 29, 2025

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12349381B2Jul 1, 2025

Dielectric isolation structure for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12166076B2Dec 10, 2024

Semiconductor device and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11532733B1Dec 20, 2022

Dielectric isolation structure for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11923250B2Mar 5, 2024

Fin loss prevention

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11791336B2Oct 17, 2023

Bent fin devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11705372B2Jul 18, 2023

Fin loss prevention

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US9224691B2Dec 29, 2015

Semiconductor device contact structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12426347B2Sep 23, 2025

Multi-gate transistor channel height adjustment

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12176212B2Dec 24, 2024

Mandrel structures and methods of fabricating the same in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US11532718B2Dec 20, 2022

FinFET having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the fins

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12389652B2Aug 12, 2025

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12136651B2Nov 5, 2024

Silicon-germanium Fins and methods of processing the same in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US9847296B2Dec 19, 2017

Barrier layer and structure method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40

CHANG CHIH-CHUNG

4 patents

(unassigned)

2 patents

GOOGLE INC

2 patents

GIANNI IND INC

2 patents

MICROSOFT TECHNOLOGY LICENSING LLC

2 patents

FAN KO HUI MICHAEL

2 patents

UNIV FENG CHIA

1 patent

ADVANCED SEMICONDUCTOR ENG

1 patent

CHANG CHIH CHUNG

1 patent

CHANG SHIH CHIEH

1 patent

GOOGLE LLC

1 patent

CHANG SHIH-CHIEH

1 patent