P

Inventor

HSU CHE-YUAN

TW30 patents
⚠️ This page may combine multiple inventors who share the name “HSU CHE-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

14 patents
US9355912B2May 31, 2016

Jog design in integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10707331B2Jul 7, 2020

FinFET device with a reduced width

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations82
US9508718B2Nov 29, 2016

FinFET contact structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11316030B2Apr 26, 2022

Fin field-effect transistor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11830948B2Nov 28, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US12131911B2Oct 29, 2024

CMP process and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11616133B2Mar 28, 2023

Fin field-effect transistor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12294028B2May 6, 2025

Manufacturing method of semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11923250B2Mar 5, 2024

Fin loss prevention

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11791336B2Oct 17, 2023

Bent fin devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11705372B2Jul 18, 2023

Fin loss prevention

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US9691721B2Jun 27, 2017

Jog design in integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9917088B2Mar 13, 2018

FinFET contact structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12136651B2Nov 5, 2024

Silicon-germanium Fins and methods of processing the same in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49

HON HAI PREC IND CO LTD

7 patents

SHENZHEN FUTAIHONG PREC IND CO

6 patents

FIH HONG KONG LTD

1 patent

WISTRON CORP

1 patent

HTC CORP

1 patent