Inventor

KAO WAN-YI

TW62 patents

Patents

50 patents

US11393711B2Jul 19, 2022

Silicon oxide layer for oxidation resistance and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86

US11069812B2Jul 20, 2021

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86

US11282749B2Mar 22, 2022

Forming nitrogen-containing low-k gate spacer

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84

US10971589B2Apr 6, 2021

Low-k feature formation processes and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84

US10692773B2Jun 23, 2020

Forming nitrogen-containing low-K gate spacer

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84

US10529553B2Jan 7, 2020

Treatment system and method

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84

US10510852B2Dec 17, 2019

Low-k feature formation processes and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84

US10312075B2Jun 4, 2019

Treatment system and method

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84

US10304677B2May 28, 2019

Low-k feature formation processes and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82

US11916132B2Feb 27, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11894464B2Feb 6, 2024

Fin field-effect transistor device with composite liner for the Fin

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11742201B2Aug 29, 2023

Method of filling gaps with carbon and nitrogen doped film

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11710782B2Jul 25, 2023

Post-formation mends of dielectric features

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11437492B2Sep 6, 2022

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73

US11355339B2Jun 7, 2022

Forming nitrogen-containing layers as oxidation blocking layers

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11322412B2May 3, 2022

Forming nitrogen-containing low-K gate spacer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11316034B2Apr 26, 2022

Post-formation mends of dielectric features

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11211243B2Dec 28, 2021

Method of filling gaps with carbon and nitrogen doped film

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US10867860B2Dec 15, 2020

Methods of forming FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US10867789B2Dec 15, 2020

Treatment to control deposition rate

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US10796898B2Oct 6, 2020

Treatment system and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US10516036B1Dec 24, 2019

Spacer structure with high plasma resistance for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US10388515B2Aug 20, 2019

Treatment to control deposition rate

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US11469229B2Oct 11, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72

US11244823B2Feb 8, 2022

Varying temperature anneal for film and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72

US10748760B2Aug 18, 2020

Varying temperature anneal for film and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72

US12368044B2Jul 22, 2025

Methods of forming dielectric layers through deposition and anneal processes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12261042B2Mar 25, 2025

Forming nitrogen-containing layers as oxidation blocking layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12255241B2Mar 18, 2025

Low-k feature formation processes and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12148652B2Nov 19, 2024

Silicon oxide layer for oxidation resistance and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11948841B2Apr 2, 2024

Forming nitrogen-containing low-K gate spacer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11670500B2Jun 6, 2023

Treatment system and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11640978B2May 2, 2023

Low-k feature formation processes and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11342177B2May 24, 2022

Treatment to control deposition rate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11329141B2May 10, 2022

Spacer structure with high plasma resistance for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12501697B2Dec 16, 2025

Methods of forming semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12444602B2Oct 14, 2025

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12288814B2Apr 29, 2025

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12266728B2Apr 1, 2025

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12218221B2Feb 4, 2025

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12206013B2Jan 21, 2025

Post-formation mends of dielectric features

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12176206B2Dec 24, 2024

Varying temperature anneal for film and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12176349B2Dec 24, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12015031B2Jun 18, 2024

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11942549B2Mar 26, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11942329B2Mar 26, 2024

Formation method of semiconductor device with dielectric isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11764221B2Sep 19, 2023

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11715637B2Aug 1, 2023

Varying temperature anneal for film and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11527653B2Dec 13, 2022

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12506001B2Dec 23, 2025

Low-K feature formation processes and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

Showing the top 50 of 62 patents by PatentIndex Score.