Inventor
MASHIYAMA MITSUO
JP28 patents
⚠️ This page may combine multiple inventors who share the name “MASHIYAMA MITSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR ENERGY LAB
19 patentsUS7869119B2Jan 11, 2011
Electronic paper
SEMICONDUCTOR ENERGY LAB18 citations92
US10205062B2Feb 12, 2019
Light emitting device that is highly reliable, thin and is not damaged by external local pressure and electronic device
SEMICONDUCTOR ENERGY LAB3 citations84
US10079330B2Sep 18, 2018
Light emitting device and electronic device having an embedded pixel electrode
SEMICONDUCTOR ENERGY LAB7 citations84
US9905516B2Feb 27, 2018
Semiconductor device and method for manufacturing the same
SEMICONDUCTOR ENERGY LAB12 citations84
US9142681B2Sep 22, 2015
Semiconductor device and method for manufacturing the same
SEMICONDUCTOR ENERGY LAB12 citations84
US11908976B2Feb 20, 2024
Light emitting device and electronic device
SEMICONDUCTOR ENERGY LAB1 citations73
US11557697B2Jan 17, 2023
Flexible light emitting device comprising a polyimide resin
SEMICONDUCTOR ENERGY LAB1 citations73
US11101407B2Aug 24, 2021
Light emitting device sealed in a fibrous body to improve manufacturability and electronic device including the light emitting device
SEMICONDUCTOR ENERGY LAB2 citations73
US10889888B2Jan 12, 2021
Sputtering target, method for manufacturing sputtering target, and method for forming thin film
SEMICONDUCTOR ENERGY LAB1 citations73
US12170339B2Dec 17, 2024
Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
SEMICONDUCTOR ENERGY LAB0 citations63
US12062724B2Aug 13, 2024
Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
SEMICONDUCTOR ENERGY LAB0 citations63
US11967648B2Apr 23, 2024
Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
SEMICONDUCTOR ENERGY LAB0 citations63
US11489077B2Nov 1, 2022
Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
SEMICONDUCTOR ENERGY LAB0 citations63
US12252775B2Mar 18, 2025
Sputtering target, method for manufacturing sputtering target, and method for forming thin film
SEMICONDUCTOR ENERGY LAB0 citations62
US11959165B2Apr 16, 2024
Semiconductor device comprising oxide semiconductor film
SEMICONDUCTOR ENERGY LAB0 citations62
US11066739B2Jul 20, 2021
Sputtering target, method for manufacturing sputtering target, and method for forming thin film
SEMICONDUCTOR ENERGY LAB0 citations62
US10217796B2Feb 26, 2019
Semiconductor device comprising an oxide layer and an oxide semiconductor layer
SEMICONDUCTOR ENERGY LAB1 citations62
US12230718B2Feb 18, 2025
Display device and manufacturing method of display device
SEMICONDUCTOR ENERGY LAB0 citations52
US9660093B2May 23, 2017
Transistor with multilayer film including oxide semiconductor layer and oxide layer
SEMICONDUCTOR ENERGY LAB1 citations52
OIKAWA YOSHIAKI
4 patentsUS8264144B2Sep 11, 2012
Light emitting device and electronic device utilizing fibrous barrier layers impregnated with organic resin
OIKAWA YOSHIAKI49 citations98
US8860306B2Oct 14, 2014
Display device having a fibrous encapsulating structure
OIKAWA YOSHIAKI11 citations92
US8169588B2May 1, 2012
Liquid crystal display device and method for manufacturing the same
OIKAWA YOSHIAKI32 citations92
US8144389B2Mar 27, 2012
Electronic paper
OIKAWA YOSHIAKI16 citations92