Inventor
KIM JOONYONG
KR12 patents
Patents
12 patentsUS11581269B2Feb 14, 2023
Semiconductor thin film structures and electronic devices including the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US12002879B2Jun 4, 2024
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11069802B2Jul 20, 2021
Field effect transistor including gradually varying composition channel
SAMSUNG ELECTRONICS CO LTD2 citations71
US12199174B2Jan 14, 2025
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations63
US12507430B2Dec 23, 2025
Power device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12464793B2Nov 4, 2025
Nitride semiconductor buffer structure and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12119397B2Oct 15, 2024
Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12040391B2Jul 16, 2024
Power device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11888059B2Jan 30, 2024
Field effect transistor including gradually varying composition channel
SAMSUNG ELECTRONICS CO LTD0 citations60
US11837642B2Dec 5, 2023
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11728419B2Aug 15, 2023
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD0 citations50
US11588046B2Feb 21, 2023
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD0 citations50