Inventor
HOTTA KATSUHIKO
JP48 patents
⚠️ This page may combine multiple inventors who share the name “HOTTA KATSUHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
18 patentsUS9391022B2Jul 12, 2016
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP8 citations92
US8704373B2Apr 22, 2014
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP12 citations92
US7932606B2Apr 26, 2011
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP14 citations92
US11062938B2Jul 13, 2021
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP3 citations84
US10141257B2Nov 27, 2018
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP6 citations84
US7968966B2Jun 28, 2011
Semiconductor device with fuse and a method of manufacturing the same
RENESAS ELECTRONICS CORP7 citations83
US12154823B2Nov 26, 2024
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations73
US11600522B2Mar 7, 2023
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP1 citations73
US8373270B2Feb 12, 2013
Semiconductor integrated circuit device and method of manufacturing same
RENESAS ELECTRONICS CORP4 citations62
US10796953B2Oct 6, 2020
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations52
US10600683B2Mar 24, 2020
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations52
US9899316B2Feb 20, 2018
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations52
US7986041B2Jul 26, 2011
Semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US9536821B2Jan 3, 2017
Semiconductor integrated circuit device having protective split at peripheral area of bonding pad and method of manufacturing same
RENESAS ELECTRONICS CORP0 citations51
US9761487B2Sep 12, 2017
Manufacturing method of semiconductor device
RENESAS ELECTRONICS CORP1 citations46
US8350311B2Jan 8, 2013
Semiconductor device
RENESAS ELECTRONICS CORP1 citations46
US9443817B2Sep 13, 2016
Method of manufacturing semiconductor device and semiconductor device
RENESAS ELECTRONICS CORP1 citations42
US10332795B2Jun 25, 2019
Manufacturing method of semiconductor device
RENESAS ELECTRONICS CORP0 citations36
RENESAS TECH CORP
17 patentsUS7629251B2Dec 8, 2009
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP16 citations92
US7557034B2Jul 7, 2009
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP17 citations92
US7354855B2Apr 8, 2008
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP12 citations92
US7208391B2Apr 24, 2007
Method of manufacturing a semiconductor integrated circuit device that includes forming an isolation trench around active regions and filling the trench with two insulating films
RENESAS TECH CORP19 citations92
US6838771B2Jan 4, 2005
Semiconductor device having conductor layers stacked on a substrate
RENESAS TECH CORP24 citations92
US6693008B1Feb 17, 2004
Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device
RENESAS TECH CORP29 citations92
US6967407B2Nov 22, 2005
Semiconductor device and method of manufacturing the semiconductor device
RENESAS TECH CORP14 citations84
US7705462B2Apr 27, 2010
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP8 citations83
US7615848B2Nov 10, 2009
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP8 citations83
US7602040B2Oct 13, 2009
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP11 citations83
US7372154B2May 13, 2008
Semiconductor device
RENESAS TECH CORP7 citations74
US7400046B2Jul 15, 2008
Semiconductor device with guard rings that are formed in each of the plural wiring layers
RENESAS TECH CORP6 citations73
US7303986B2Dec 4, 2007
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP6 citations73
US7718269B2May 18, 2010
Semiconductor manufacturing method for inter-layer insulating film
RENESAS TECH CORP6 citations68
US7772700B2Aug 10, 2010
Semiconductor device
RENESAS TECH CORP3 citations63
US7247525B2Jul 24, 2007
Method for manufacturing a semiconductor device
RENESAS TECH CORP3 citations63
US7419901B2Sep 2, 2008
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP3 citations61
HOTTA KATSUHIKO
6 patentsUS8581415B2Nov 12, 2013
Semiconductor device and a method of manufacturing the same
HOTTA KATSUHIKO3 citations73
US8513808B2Aug 20, 2013
Semiconductor device having trench-isolated element formation region
HOTTA KATSUHIKO6 citations72
US8518821B2Aug 27, 2013
Semiconductor device and a method of manufacturing the same
HOTTA KATSUHIKO1 citations62
US8487412B2Jul 16, 2013
Semiconductor device and a method of manufacturing the same
HOTTA KATSUHIKO1 citations62
US8686538B2Apr 1, 2014
Semiconductor device with a fuse formed by a damascene technique and a method of manufacturing the same
HOTTA KATSUHIKO1 citations61
US8269309B2Sep 18, 2012
Semiconductor device with a fuse formed by a damascene technique and a method of manufacturing the same
HOTTA KATSUHIKO3 citations61
HITACHI LTD
2 patentsUS6833331B2Dec 21, 2004
Method of manufacturing semiconductor integrated circuit device having insulating film formed from liquid substance containing polymer of silicon, oxygen, and hydrogen
HITACHI LTD13 citations84
US6509277B1Jan 21, 2003
Method of manufacturing semiconductor integrated circuit device having insulatro film formed from liquid containing polymer of silicon, oxygen, and hydrogen
HITACHI LTD10 citations74
HITACHI ULSI SYS CO LTD
2 patentsUS7189637B2Mar 13, 2007
Method of manufacturing a semiconductor device having a multi-layered wiring structure
HITACHI ULSI SYS CO LTD9 citations73
US7060589B2Jun 13, 2006
Method for manufacturing a semiconductor integrated circuit device that includes covering the bottom of an isolation trench with spin-on glass and etching back the spin-on glass to a predetermined depth
HITACHI ULSI SYS CO LTD4 citations73