Inventor

TAWARA TAKESHI

JP24 patents

⚠️ This page may combine multiple inventors who share the name “TAWARA TAKESHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAWARA TAKESHI

FUJI ELECTRIC CO LTD

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device and method of manufacturing semiconductor device

Silicon carbide epitaxial substrate, method of manufacturing thereof, silicon carbide semiconductor device, and method of manufacturing thereof

Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device, and method of manufacturing semiconductor device

Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor device

Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

Vertical MOSFET having trench gate structure containing silicon carbide

Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device, and method of manufacturing semiconductor device

Silicon carbide semiconductor base, method of crystal axis alignment in silicon carbide semiconductor base, and method of manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor substrate, method of manufacturing a silicon carbide semiconductor device, and silicon carbide semiconductor device

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Super junction silicon carbide semiconductor device and manufacturing method thereof

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device

Method of manufacturing a silicon carbide semiconductor device including depositing a second silicon carbide semiconductor on an etched silicon carbide base region

Silicon carbide epitaxial wafer, silicon carbide insulated gate bipolar transistor, and method of manufacturing the same

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

KAWADA YASUYUKI

Method for manufacturing silicon carbide semiconductor device and the silicon carbide semiconductor device

Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device

Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device

Method for manufacturing silicon carbide semiconductor device and the silicon carbide semiconductor device

Method of manufacturing a silicon carbide semiconductor device

FUJI ELEC DEVICE TECH CO LTD

Method of manufacturing silicon carbide semiconductor device

YONEZAWA YOSHIYUKI

Silicon carbide semiconductor device and method for manufacturing the same