Inventor
HWU JENN-GWO
TW40 patents
⚠️ This page may combine multiple inventors who share the name “HWU JENN-GWO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
31 patentsUS11411535B2Aug 9, 2022
Semiconductor device and operation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10958216B2Mar 23, 2021
Semiconductor device and operation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12100753B2Sep 24, 2024
Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11757025B2Sep 12, 2023
Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11722099B2Aug 8, 2023
Semiconductor device and operation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10978461B2Apr 13, 2021
Antifuse array and method of forming antifuse using anodic oxidation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11563009B2Jan 24, 2023
Semiconductor memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11502189B2Nov 15, 2022
Charge storage and sensing devices and methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11605674B2Mar 14, 2023
Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11024674B2Jun 1, 2021
Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11532669B2Dec 20, 2022
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations58
US12426317B2Sep 23, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations56
US12274078B2Apr 8, 2025
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US11574908B2Feb 7, 2023
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US11195835B2Dec 7, 2021
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US11855099B2Dec 26, 2023
Metal-insulator-semiconductor tunnel diode memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868117B2Dec 15, 2020
Systems and methods for forming nanowires using anodic oxidation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510837B2Dec 17, 2019
Systems and methods for forming nanowires using anodic oxidation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10504907B2Dec 10, 2019
Antifuse array and method of forming antifuse using anodic oxidation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9953989B2Apr 24, 2018
Antifuse array and method of forming antifuse using anodic oxidation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9812395B2Nov 7, 2017
Methods of forming an interconnect structure using a self-ending anodic oxidation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9528194B2Dec 27, 2016
Systems and methods for forming nanowires using anodic oxidation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10879249B2Dec 29, 2020
Semiconductor memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10868158B2Dec 15, 2020
Charge storage and sensing devices and methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10868157B2Dec 15, 2020
Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10651300B2May 12, 2020
Charge storage and sensing devices and methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10381353B2Aug 13, 2019
Semiconductor memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9748379B2Aug 29, 2017
Double exponential mechanism controlled transistor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US10515998B2Dec 24, 2019
Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12464776B2Nov 4, 2025
Charge-coupled transistor with different-dielectric-thickness structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US12402334B2Aug 26, 2025
Integrated circuit device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
NAT SCIENCE COUNCIL
5 patentsUS5736454AApr 7, 1998
Method for making a silicon dioxide layer on a silicon substrate by pure water anodization followed by rapid thermal densification
NAT SCIENCE COUNCIL17 citations80
US5926615AJul 20, 1999
Temperature compensation method for semiconductor wafers in rapid thermal processor using separated heat conducting rings as susceptors
NAT SCIENCE COUNCIL18 citations79
US6091889AJul 18, 2000
Rapid thermal processor for heating a substrate
NAT SCIENCE COUNCIL7 citations73
US6352939B1Mar 5, 2002
Method for improving the electrical properties of a gate oxide
NAT SCIENCE COUNCIL3 citations63
US5527397AJun 18, 1996
Photoelectric conversion device
NAT SCIENCE COUNCIL7 citations63