P

Inventor

HWU JENN-GWO

TW40 patents
⚠️ This page may combine multiple inventors who share the name “HWU JENN-GWO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

31 patents
US11411535B2Aug 9, 2022

Semiconductor device and operation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10958216B2Mar 23, 2021

Semiconductor device and operation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12100753B2Sep 24, 2024

Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11757025B2Sep 12, 2023

Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11722099B2Aug 8, 2023

Semiconductor device and operation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10978461B2Apr 13, 2021

Antifuse array and method of forming antifuse using anodic oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11563009B2Jan 24, 2023

Semiconductor memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11502189B2Nov 15, 2022

Charge storage and sensing devices and methods

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11605674B2Mar 14, 2023

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11024674B2Jun 1, 2021

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11532669B2Dec 20, 2022

Memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations58
US12426317B2Sep 23, 2025

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations56
US12274078B2Apr 8, 2025

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US11574908B2Feb 7, 2023

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US11195835B2Dec 7, 2021

Memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US11855099B2Dec 26, 2023

Metal-insulator-semiconductor tunnel diode memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868117B2Dec 15, 2020

Systems and methods for forming nanowires using anodic oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510837B2Dec 17, 2019

Systems and methods for forming nanowires using anodic oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10504907B2Dec 10, 2019

Antifuse array and method of forming antifuse using anodic oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9953989B2Apr 24, 2018

Antifuse array and method of forming antifuse using anodic oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9812395B2Nov 7, 2017

Methods of forming an interconnect structure using a self-ending anodic oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9528194B2Dec 27, 2016

Systems and methods for forming nanowires using anodic oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10879249B2Dec 29, 2020

Semiconductor memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10868158B2Dec 15, 2020

Charge storage and sensing devices and methods

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10868157B2Dec 15, 2020

Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10651300B2May 12, 2020

Charge storage and sensing devices and methods

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10381353B2Aug 13, 2019

Semiconductor memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9748379B2Aug 29, 2017

Double exponential mechanism controlled transistor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US10515998B2Dec 24, 2019

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12464776B2Nov 4, 2025

Charge-coupled transistor with different-dielectric-thickness structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US12402334B2Aug 26, 2025

Integrated circuit device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48

NAT SCIENCE COUNCIL

5 patents

NAT SCIENCE COUNSIL

1 patent

UNIV NAT TAIWAN

1 patent

IND TECH RES INST

1 patent

MACRONIX INT CO LTD

1 patent