Inventor
TRINH HAI-DANG
TW94 patents
Patents
50 patentsUS10164182B1Dec 25, 2018
Switching layer scheme to enhance RRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD36 citations98
US10748798B1Aug 18, 2020
Wireless camera wafer for vacuum chamber diagnostics
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations94
US9954166B1Apr 24, 2018
Embedded memory device with a composite top electrode
TAIWAN SEMICONDUCTOR MFG CO LTD29 citations94
US10176866B1Jan 8, 2019
Recap layer scheme to enhance RRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations86
US11362271B2Jun 14, 2022
Switching layer scheme to enhance RRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10910560B2Feb 2, 2021
RRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10811600B2Oct 20, 2020
Switching layer scheme to enhance RRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10622555B2Apr 14, 2020
Film scheme to improve peeling in chalcogenide based PCRAM
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10505107B2Dec 10, 2019
Switching layer scheme to enhance RRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10497867B1Dec 3, 2019
Multi-layer structure to increase crystalline temperature of a selector device
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10163949B2Dec 25, 2018
Image device having multi-layered refractive layer on back surface
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9978938B2May 22, 2018
Resistive RAM structure and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9647207B2May 9, 2017
Resistive random access memory (RRAM) structure
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9627613B2Apr 18, 2017
Resistive random access memory (RRAM) cell with a composite capping layer
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US12127483B2Oct 22, 2024
Doped sidewall spacer/etch stop layer for memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11961545B2Apr 16, 2024
Circuit design and layout with high embedded memory density
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11856801B2Dec 26, 2023
Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11844226B2Dec 12, 2023
FeRAM with laminated ferroelectric film and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11758830B2Sep 12, 2023
Memory device structure with protective element
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11545202B2Jan 3, 2023
Circuit design and layout with high embedded memory density
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11527717B2Dec 13, 2022
Resistive memory cell having a low forming voltage
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11527713B2Dec 13, 2022
Top electrode via with low contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11479849B2Oct 25, 2022
Physical vapor deposition chamber with target surface morphology monitor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11430951B2Aug 30, 2022
Resistive memory cell with switching layer comprising one or more dopants
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11404638B2Aug 2, 2022
Multi-doped data storage structure configured to improve resistive memory cell performance
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11309492B2Apr 19, 2022
Multi-layer structure to increase crystalline temperature of a selector device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11088239B2Aug 10, 2021
Cap structure for trench capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11018297B2May 25, 2021
Memory device structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10818544B2Oct 27, 2020
Method to enhance electrode adhesion stability
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10804464B2Oct 13, 2020
Method of forming memory device with diffusion barrier and capping layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10164003B2Dec 25, 2018
MIM capacitor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9728597B2Aug 8, 2017
Metal-insulator-metal structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12132066B2Oct 29, 2024
Capping structure along image sensor element to mitigate damage to active layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11610927B2Mar 21, 2023
Capping structure along image sensor element to mitigate damage to active layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12486566B2Dec 2, 2025
Physical vapor deposition chamber with target surface morphology monitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12424256B2Sep 23, 2025
Circuit design and layout with high embedded memory density
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12414484B2Sep 9, 2025
RRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12408567B2Sep 2, 2025
Memory device structure with data storage element
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12310036B2May 20, 2025
Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12261197B2Mar 25, 2025
Diffusion barrier layer in top electrode to increase break down voltage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12232336B2Feb 18, 2025
Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12178147B2Dec 24, 2024
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12075636B2Aug 27, 2024
Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12069971B2Aug 20, 2024
Switching layer scheme to enhance RRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11963468B2Apr 16, 2024
Rram structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11683999B2Jun 20, 2023
Switching layer scheme to enhance RRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11532698B2Dec 20, 2022
Diffusion barrier layer in top electrode to increase break down voltage
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11482668B2Oct 25, 2022
RRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11476416B2Oct 18, 2022
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11121208B2Sep 14, 2021
MIM capacitor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
Showing the top 50 of 94 patents by PatentIndex Score.