Inventor
TAKEMURA HISASHI
JP25 patents
Patents
25 patentsUS5666020ASep 9, 1997
Field emission electron gun and method for fabricating the same
NEC CORP58 citations96
US5099304AMar 24, 1992
Semiconductor device with insulating isolation groove
NEC CORP100 citations96
US5587326ADec 24, 1996
Method of forming bipolar junction transistor of epitaxial planar type
NEC CORP24 citations92
US5576221ANov 19, 1996
Manufacturing method of semiconductor device
NEC CORP37 citations92
US5397731AMar 14, 1995
Method of manufacturing semiconductor integrated circuit device
NEC CORP31 citations92
US6933569B2Aug 23, 2005
Soi mosfet
NEC CORP24 citations91
US7247910B2Jul 24, 2007
MOSFET formed on a silicon-on-insulator substrate having a SOI layer and method of manufacturing
NEC CORP11 citations84
US5717275AFeb 10, 1998
Multi-emitter electron gun of a field emission type capable of emitting electron beam with its divergence suppressed
NEC CORP17 citations84
US6024618AFeb 15, 2000
Method of operating electron tube
NEC CORP10 citations74
US6018215AJan 25, 2000
Field emission cold cathode having a cone-shaped emitter
NEC CORP10 citations74
US5924903AJul 20, 1999
Method of fabricating a cold cathode for field emission
NEC CORP7 citations74
US5910701AJun 8, 1999
Field-emission cold cathode and manufacturing method for same
NEC CORP14 citations74
US5627402AMay 6, 1997
Variable-capacitance device and semiconductor integrated circuit device having such variable-capacitance device
NEC CORP14 citations74
US5620350AApr 15, 1997
Method for making a field-emission type electron gun
NEC CORP8 citations74
US5506442AApr 9, 1996
Variable-capacitance device and semiconductor integrated circuit device having such variable-capacitance device
NEC CORP7 citations74
US5374846ADec 20, 1994
Bipolar transistor with a particular base and collector regions
NEC CORP18 citations74
US6975001B2Dec 13, 2005
Semiconductor device and method of fabricating the same
NEC CORP10 citations73
US6031322AFeb 29, 2000
Field emission cold cathode having a serial resistance layer divided into a plurality of sections
NEC CORP9 citations71
US6084341AJul 4, 2000
Electric field emission cold cathode
NEC CORP4 citations63
US6043103AMar 28, 2000
Field-emission cold cathode and method of manufacturing same
NEC CORP3 citations63
US6060823AMay 9, 2000
Field emission cold cathode element
NEC CORP6 citations61
US7485923B2Feb 3, 2009
SOI semiconductor device with improved halo region and manufacturing method of the same
NEC CORP6 citations60
US7211517B2May 1, 2007
Semiconductor device and method that includes reverse tapering multiple layers
NEC CORP2 citations60
US6351059B1Feb 26, 2002
Field-emission type cold cathode and application thereof
NEC CORP1 citations52
US7611934B2Nov 3, 2009
Semiconductor device and method of fabricating the same
NEC CORP0 citations51