Inventor
RODRIGUEZ JOHN A
US18 patents
⚠️ This page may combine multiple inventors who share the name “RODRIGUEZ JOHN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
17 patentsUS6465307B1Oct 15, 2002
Method for manufacturing an asymmetric I/O transistor
TEXAS INSTRUMENTS INC35 citations91
US9767879B2Sep 19, 2017
Setting of reference voltage for data sensing in ferroelectric memories
TEXAS INSTRUMENTS INC7 citations80
US7085150B2Aug 1, 2006
Methods for enhancing performance of ferroelectic memory with polarization treatment
TEXAS INSTRUMENTS INC7 citations73
US9851914B2Dec 26, 2017
Random number generation in ferroelectric random access memory (FRAM)
TEXAS INSTRUMENTS INC4 citations72
US9842662B2Dec 12, 2017
Screening for data retention loss in ferroelectric memories
TEXAS INSTRUMENTS INC2 citations71
US9552880B2Jan 24, 2017
Screening for later life stuck bits in ferroelectric memories
TEXAS INSTRUMENTS INC4 citations71
US7894234B2Feb 22, 2011
F-SRAM before package solid data write
TEXAS INSTRUMENTS INC2 citations62
US9070575B2Jun 30, 2015
Integrated circuit with integrated decoupling capacitors
TEXAS INSTRUMENTS INC2 citations61
US6060372AMay 9, 2000
Method for making a semiconductor device with improved sidewall junction capacitance
TEXAS INSTRUMENTS INC4 citations58
US10546626B2Jan 28, 2020
Method and circuit enabling ferroelectric memory to be fixed to a stable state
TEXAS INSTRUMENTS INC0 citations51
US10152257B2Dec 11, 2018
Random number generation in ferroelectric random access memory (FRAM)
TEXAS INSTRUMENTS INC1 citations51
US9934840B2Apr 3, 2018
Method and circuit enabling ferroelectric memory to be fixed to a stable state
TEXAS INSTRUMENTS INC0 citations51
US9607717B2Mar 28, 2017
Reliability screening of ferroelectric memories in integrated circuits
TEXAS INSTRUMENTS INC1 citations51
US10290362B2May 14, 2019
Screening for data retention loss in ferroelectric memories
TEXAS INSTRUMENTS INC0 citations50
US10573367B2Feb 25, 2020
Setting of reference voltage for data sensing in ferroelectric memories
TEXAS INSTRUMENTS INC0 citations48
US11495607B2Nov 8, 2022
Low-temperature passivation of ferroelectric integrated circuits for enhanced polarization performance
TEXAS INSTRUMENTS INC0 citations47
US7889535B2Feb 15, 2011
F-SRAM margin screen
TEXAS INSTRUMENTS INC0 citations41