Inventor
MOCHIZUKI KAZUHIRO
JP33 patents
⚠️ This page may combine multiple inventors who share the name “MOCHIZUKI KAZUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
15 patentsUS6461927B1Oct 8, 2002
Semiconductor device and method of producing the same
HITACHI LTD37 citations92
US5481120AJan 2, 1996
Semiconductor device and its fabrication method
HITACHI LTD36 citations91
US5949097ASep 7, 1999
Semiconductor device, method for manufacturing same, communication system and electric circuit system
HITACHI LTD17 citations84
US6573540B2Jun 3, 2003
Semiconductor device and method for fabricating the same
HITACHI LTD6 citations74
US6403991B1Jun 11, 2002
Semiconductor device and method for fabricating the same
HITACHI LTD11 citations74
US7067857B2Jun 27, 2006
Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module
HITACHI LTD9 citations73
US6881639B2Apr 19, 2005
Method of manufacturing semiconductor device
HITACHI LTD7 citations73
US5668402ASep 16, 1997
Semiconductor device
HITACHI LTD15 citations73
US9711600B2Jul 18, 2017
Semiconductor device and method of manufacturing the same, power conversion device, three-phase motor system, automobile, and railway vehicle
HITACHI LTD2 citations72
US8710550B2Apr 29, 2014
Semiconductor device with hetero-junction bodies
HITACHI LTD6 citations72
US5296733AMar 22, 1994
Hetero junction bipolar transistor with improved electrode wiring contact region
HITACHI LTD14 citations71
US7906796B2Mar 15, 2011
Bipolar device and fabrication method thereof
HITACHI LTD4 citations63
US6639257B2Oct 28, 2003
Hetero-junction bipolar transistor having a dummy electrode
HITACHI LTD2 citations63
US8896027B2Nov 25, 2014
Nitride semiconductor diode
HITACHI LTD3 citations62
US5017517AMay 21, 1991
Method of fabricating semiconductor device using an Sb protection layer
HITACHI LTD6 citations62
RENESAS TECH CORP
7 patentsUS6943387B2Sep 13, 2005
Semiconductor device, manufacturing thereof and power amplifier module
RENESAS TECH CORP7 citations74
US6743691B2Jun 1, 2004
Semiconductor device and method for fabricating the same
RENESAS TECH CORP8 citations74
US6696711B2Feb 24, 2004
Semiconductor device and power amplifier using the same
RENESAS TECH CORP10 citations74
US7001819B2Feb 21, 2006
Semiconductor device and power amplifier using the same
RENESAS TECH CORP2 citations63
US7547929B2Jun 16, 2009
Semiconductor HBT MMIC device and semiconductor module
RENESAS TECH CORP3 citations62
US6984871B2Jan 10, 2006
Semiconductor device with high structural reliability and low parasitic capacitance
RENESAS TECH CORP6 citations62
US7276744B2Oct 2, 2007
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP0 citations42
HITACHI POWER SEMICONDUCTOR DEVICE LTD
2 patentsUS9478605B2Oct 25, 2016
Semiconductor device with similar impurity concentration JTE regions
HITACHI POWER SEMICONDUCTOR DEVICE LTD7 citations84
US9755014B2Sep 5, 2017
Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth
HITACHI POWER SEMICONDUCTOR DEVICE LTD0 citations52