Inventor
ONOSE HIDEKATSU
JP22 patents
⚠️ This page may combine multiple inventors who share the name “ONOSE HIDEKATSU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
16 patentsUS6353236B1Mar 5, 2002
Semiconductor surge absorber, electrical-electronic apparatus, and power module using the same
HITACHI LTD52 citations96
US5629888AMay 13, 1997
Semiconductor memory device and method of operation thereof
HITACHI LTD42 citations96
US5307304AApr 26, 1994
Semiconductor memory device and method of operation thereof
HITACHI LTD83 citations96
US6917054B2Jul 12, 2005
Semiconductor device
HITACHI LTD37 citations92
US6894346B2May 17, 2005
Semiconductor device
HITACHI LTD33 citations92
US5936832AAug 10, 1999
Semiconductor memory device and method of operation thereof
HITACHI LTD22 citations92
US7768066B2Aug 3, 2010
Semiconductor device and electrical circuit device using thereof
HITACHI LTD11 citations83
US6566726B1May 20, 2003
Semiconductor device and power converter using the same
HITACHI LTD18 citations80
US5652467AJul 29, 1997
Semiconductor device and package structure therefore and power inverter having semiconductor device
HITACHI LTD14 citations73
US5107307AApr 21, 1992
Semiconductor device for control of light
HITACHI LTD8 citations73
US5459338AOct 17, 1995
Gate turn-off thyristor and power convertor using the same
HITACHI LTD8 citations71
US7906796B2Mar 15, 2011
Bipolar device and fabrication method thereof
HITACHI LTD4 citations63
US6940741B2Sep 6, 2005
Semiconductor memory device and methods of operation thereof
HITACHI LTD3 citations63
US5635734AJun 3, 1997
Insulated gate type semiconductor device in which the reliability and characteristics thereof are not deteriorated due to pressing action and power inverter using the same
HITACHI LTD6 citations61
US7256453B2Aug 14, 2007
Semiconductor device
HITACHI LTD0 citations52
US6750477B2Jun 15, 2004
Static induction transistor
HITACHI LTD0 citations51
HITACHI POWER SEMICONDUCTOR DEVICE LTD
2 patentsUS9478605B2Oct 25, 2016
Semiconductor device with similar impurity concentration JTE regions
HITACHI POWER SEMICONDUCTOR DEVICE LTD7 citations84
US9755014B2Sep 5, 2017
Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth
HITACHI POWER SEMICONDUCTOR DEVICE LTD0 citations52