Inventor

YOKOYAMA NATSUKI

JP61 patents

⚠️ This page may combine multiple inventors who share the name “YOKOYAMA NATSUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YOKOYAMA NATSUKI

HITACHI LTD

Fabrication system and fabrication method

Fabrication system and method having inter-apparatus transporter

Titanium nitride film in contact hole with large aspect ratio

Integrated micro electro-mechanical system and manufacturing method thereof

Method and apparatus for fabricating semiconductor devices

Fabrication system and method having inter-apparatus transporter

Wafer transport method

Method for fabricating an insulating film from a silicone resin using O.sub.

Refractory metal thin film having a particular step coverage factor and ratio of surface roughness

Semiconductor device using MEMS switch

Sensor and sensor module

Method of manufacturing semiconductor device

Method for manufacturing semiconductor integrated circuit device having a titanium electrode

Wafer transport method

Process for fabricating field effect transistor

Method of forming metal or metal silicide film

Semiconductor device with wiring layer using bias sputtering

Semiconductor device embedded with pressure sensor and manufacturing method thereof

Semiconductor device embedded with pressure sensor and manufacturing method thereof

Method of manufacturing semiconductor devices

Semiconductor device

Bipolar device and fabrication method thereof

Device and data processing method employing the device

RENESAS TECH CORP

Fabrication system and fabrication method

Method of manufacturing semiconductor device

Nonvolatile semiconductor memory device and manufacturing method thereof

MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions

Manufacturing method of semiconductor device

Fabrication system and fabrication method

Fabrication system and fabrication method

Fabrication system and fabrication method

Method of manufacturing nonvolatile semiconductor memory device

Method of making a MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions

Semiconductor device with large blocking voltage and method of manufacturing the same

Semiconductor device and process for producing the same

Semiconductor device and process for producing the same

SHIMIZU HARUKA

Semiconductor device including normally-off type junction transistor and method of manufacturing the same

Electronic circuit device

Semiconductor device with large blocking voltage and manufacturing method thereof

Electronic circuit device

HITACHI POWER SEMICONDUCTOR DEVICE LTD

Semiconductor device with similar impurity concentration JTE regions

Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth

HITACHI ULSI SYS CO LTD

Semiconductor device and method for manufacturing thereof

Semiconductor device and method for manufacturing thereof

ARAI KOICHI

Normally-off power JFET and manufacturing method thereof

FUKUDA HIROSHI

Integrated micro electro-mechanical system and manufacturing method thereof

YOKOYAMA NATSUKI

Manufacturing method of semiconductor device

OHNO TOSHIYUKI

Silicon carbide semiconductor substrate and method of manufacturing the same

RENESAS ELECTRONICS CORP

Electronic circuit device

JAPAN SCIENCE & TECH AGENCY

Information storage element, manufacturing method thereof, and memory array