P

Inventor

NAKAYAMA KAZUYA

JP26 patents
⚠️ This page may combine multiple inventors who share the name “NAKAYAMA KAZUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

20 patents
US5554862ASep 10, 1996

Power semiconductor device

TOSHIBA KK135 citations98
US5464994ANov 7, 1995

Insulated-gate thyristor

TOSHIBA KK45 citations96
US5381026AJan 10, 1995

Insulated-gate thyristor

TOSHIBA KK46 citations96
US6323831B1Nov 27, 2001

Electron emitting device and switching circuit using the same

TOSHIBA KK43 citations92
US6236069B1May 22, 2001

Insulated-gate thyristor

TOSHIBA KK26 citations92
US6057636AMay 2, 2000

Micro power switch using a cold cathode and a driving method thereof

TOSHIBA KK42 citations92
US6040598AMar 21, 2000

High-breakdown-voltage semiconductor apparatus

TOSHIBA KK18 citations92
US5793065AAug 11, 1998

Insulated-gate thyristor

TOSHIBA KK29 citations92
US5703383ADec 30, 1997

Power semiconductor device

TOSHIBA KK39 citations92
US6469425B1Oct 22, 2002

Electron emission film and field emission cold cathode device

TOSHIBA KK20 citations88
US5463231AOct 31, 1995

Method of operating thyristor with insulated gates

TOSHIBA KK13 citations74
US5428228AJun 27, 1995

Method of operating thyristor with insulated gates

TOSHIBA KK11 citations74
US7341900B2Mar 11, 2008

Semiconductor device and method for manufacturing the same

TOSHIBA KK2 citations63
US7034346B2Apr 25, 2006

Semiconductor device and method for manufacturing the same

TOSHIBA KK2 citations63
US7019361B2Mar 28, 2006

Semiconductor device and method of fabricating the same

TOSHIBA KK2 citations63
US6297586B1Oct 2, 2001

Cold-cathode power switching device of field-emission type

TOSHIBA KK3 citations63
US8008715B2Aug 30, 2011

Semiconductor device

TOSHIBA KK5 citations62
USRE40712EMay 19, 2009

High-breakdown-voltage semiconductor apparatus

TOSHIBA KK0 citations52
USRE40705EMay 5, 2009

High-breakdown-voltage semiconductor apparatus

TOSHIBA KK0 citations52
US6958514B2Oct 25, 2005

Semiconductor device and method of fabricating the same

TOSHIBA KK1 citations52

NIPPON MINING CO

2 patents

FUJI ELECTRIC CO LTD

1 patent

SEIKO EPSON CORP

1 patent

KAWABATA SUGURU

1 patent

KANEGAFUCHI CHEMICAL IND

1 patent