Inventor
WANG ZIYUN
US41 patents
⚠️ This page may combine multiple inventors who share the name “WANG ZIYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED TECH MATERIALS
19 patentsUS7531679B2May 12, 2009
Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
ADVANCED TECH MATERIALS55 citations97
US7713346B2May 11, 2010
Composition and method for low temperature deposition of silicon-containing films
ADVANCED TECH MATERIALS31 citations96
US7887883B2Feb 15, 2011
Composition and method for low temperature deposition of silicon-containing films
ADVANCED TECH MATERIALS23 citations93
US7863203B2Jan 4, 2011
Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
ADVANCED TECH MATERIALS19 citations93
US7781605B2Aug 24, 2010
Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
ADVANCED TECH MATERIALS14 citations93
US7579496B2Aug 25, 2009
Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
ADVANCED TECH MATERIALS16 citations93
US6639080B2Oct 28, 2003
Pyrazolate copper complexes, and MOCVD of copper using same
ADVANCED TECH MATERIALS18 citations93
US6440202B1Aug 27, 2002
Pyrazolate copper complexes, and MOCVD of copper using same
ADVANCED TECH MATERIALS22 citations93
US7910765B2Mar 22, 2011
Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
ADVANCED TECH MATERIALS19 citations92
US7786320B2Aug 31, 2010
Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
ADVANCED TECH MATERIALS29 citations92
US7601860B2Oct 13, 2009
Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
ADVANCED TECH MATERIALS17 citations92
US7446217B2Nov 4, 2008
Composition and method for low temperature deposition of silicon-containing films
ADVANCED TECH MATERIALS29 citations92
US6623656B2Sep 23, 2003
Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same
ADVANCED TECH MATERIALS28 citations92
US6417369B1Jul 9, 2002
Pyrazolate copper complexes, and MOCVD of copper using same
ADVANCED TECH MATERIALS26 citations91
US7108771B2Sep 19, 2006
Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
ADVANCED TECH MATERIALS24 citations90
US7084080B2Aug 1, 2006
Silicon source reagent compositions, and method of making and using same for microelectronic device structure
ADVANCED TECH MATERIALS16 citations84
US7189571B1Mar 13, 2007
Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric constant thin films
ADVANCED TECH MATERIALS6 citations73
US6767830B2Jul 27, 2004
Br2SbCH3 a solid source ion implant and CVD precursor
ADVANCED TECH MATERIALS8 citations71
US7439318B2Oct 21, 2008
Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric constant thin films
ADVANCED TECH MATERIALS0 citations52
WANG ZIYUN
7 patentsUS8802882B2Aug 12, 2014
Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
WANG ZIYUN15 citations92
US8236097B2Aug 7, 2012
Composition and method for low temperature deposition of silicon-containing films
WANG ZIYUN13 citations92
US8242032B2Aug 14, 2012
Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
WANG ZIYUN7 citations84
US8541318B2Sep 24, 2013
Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
WANG ZIYUN1 citations62
US8153833B2Apr 10, 2012
Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
WANG ZIYUN3 citations62
US8227358B2Jul 24, 2012
Silicon precursors and method for low temperature CVD of silicon-containing films
WANG ZIYUN0 citations51
US8101788B2Jan 24, 2012
Silicon precursors and method for low temperature CVD of silicon-containing films
WANG ZIYUN1 citations51
SAMSUNG ELECTRONICS CO LTD
3 patentsUS12299899B2May 13, 2025
Systems and methods for real-time state estimation of fast-moving objects
SAMSUNG ELECTRONICS CO LTD2 citations67
US11380061B2Jul 5, 2022
Method and apparatus for three-dimensional (3D) object and surface reconstruction
SAMSUNG ELECTRONICS CO LTD0 citations46
US11642787B2May 9, 2023
Trajectory generation of a robot using a neural network
SAMSUNG ELECTRONICS CO LTD0 citations45
UNIV JIANGNAN
3 patentsUS11002802B2May 11, 2021
Fault detection method for buck converter based on inverse kalman filter
UNIV JIANGNAN4 citations66
US11802915B2Oct 31, 2023
Uncertain noisy filtering-based fault diagnosis method for power battery management system
UNIV JIANGNAN0 citations41
US11650253B2May 16, 2023
State estimation method for power battery formation process based on convex space filtering
UNIV JIANGNAN0 citations40
ENTEGRIS INC
2 patentsUS9102693B2Aug 11, 2015
Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
ENTEGRIS INC8 citations84
US9783558B2Oct 10, 2017
Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
ENTEGRIS INC1 citations62
AIR LIQUIDE
2 patentsUS11008351B2May 18, 2021
Methods for vapor deposition of group 4 transition metal-containing films using Group 4 transition metal-containing films forming compositions
AIR LIQUIDE0 citations62
US12467134B2Nov 11, 2025
Method for deposition of gallium-containing film with gallium precursors
AIR LIQUIDE0 citations52