P

Inventor

WANG ZIYUN

US41 patents
⚠️ This page may combine multiple inventors who share the name “WANG ZIYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED TECH MATERIALS

19 patents
US7531679B2May 12, 2009

Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride

ADVANCED TECH MATERIALS55 citations97
US7713346B2May 11, 2010

Composition and method for low temperature deposition of silicon-containing films

ADVANCED TECH MATERIALS31 citations96
US7887883B2Feb 15, 2011

Composition and method for low temperature deposition of silicon-containing films

ADVANCED TECH MATERIALS23 citations93
US7863203B2Jan 4, 2011

Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same

ADVANCED TECH MATERIALS19 citations93
US7781605B2Aug 24, 2010

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

ADVANCED TECH MATERIALS14 citations93
US7579496B2Aug 25, 2009

Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same

ADVANCED TECH MATERIALS16 citations93
US6639080B2Oct 28, 2003

Pyrazolate copper complexes, and MOCVD of copper using same

ADVANCED TECH MATERIALS18 citations93
US6440202B1Aug 27, 2002

Pyrazolate copper complexes, and MOCVD of copper using same

ADVANCED TECH MATERIALS22 citations93
US7910765B2Mar 22, 2011

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

ADVANCED TECH MATERIALS19 citations92
US7786320B2Aug 31, 2010

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

ADVANCED TECH MATERIALS29 citations92
US7601860B2Oct 13, 2009

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

ADVANCED TECH MATERIALS17 citations92
US7446217B2Nov 4, 2008

Composition and method for low temperature deposition of silicon-containing films

ADVANCED TECH MATERIALS29 citations92
US6623656B2Sep 23, 2003

Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same

ADVANCED TECH MATERIALS28 citations92
US6417369B1Jul 9, 2002

Pyrazolate copper complexes, and MOCVD of copper using same

ADVANCED TECH MATERIALS26 citations91
US7108771B2Sep 19, 2006

Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films

ADVANCED TECH MATERIALS24 citations90
US7084080B2Aug 1, 2006

Silicon source reagent compositions, and method of making and using same for microelectronic device structure

ADVANCED TECH MATERIALS16 citations84
US7189571B1Mar 13, 2007

Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric constant thin films

ADVANCED TECH MATERIALS6 citations73
US6767830B2Jul 27, 2004

Br2SbCH3 a solid source ion implant and CVD precursor

ADVANCED TECH MATERIALS8 citations71
US7439318B2Oct 21, 2008

Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric constant thin films

ADVANCED TECH MATERIALS0 citations52

WANG ZIYUN

7 patents

SAMSUNG ELECTRONICS CO LTD

3 patents

UNIV JIANGNAN

3 patents

ENTEGRIS INC

2 patents

AIR LIQUIDE

2 patents

GATINEAU SATOKO

1 patent

UNIV NANJING AERONAUTICS & ASTRONAUTICS

1 patent

AIR LIQUIDE ELECTRONICS US LP

1 patent

BLASCO NICOLAS

1 patent

WAN ZHIWEN

1 patent