P

Inventor

NISHITA TATSUO

JP16 patents
⚠️ This page may combine multiple inventors who share the name “NISHITA TATSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

9 patents
US8366953B2Feb 5, 2013

Plasma cleaning method and plasma CVD method

TOKYO ELECTRON LTD88 citations97
US7156923B2Jan 2, 2007

Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method

TOKYO ELECTRON LTD19 citations92
US6844273B2Jan 18, 2005

Precleaning method of precleaning a silicon nitride film forming system

TOKYO ELECTRON LTD20 citations92
US7674722B2Mar 9, 2010

Method of forming gate insulating film, semiconductor device and computer recording medium

TOKYO ELECTRON LTD11 citations83
US7304002B2Dec 4, 2007

Method of oxidizing member to be treated

TOKYO ELECTRON LTD8 citations72
US11676847B2Jun 13, 2023

Substrate placing table and substrate processing apparatus

TOKYO ELECTRON LTD0 citations61
US11508603B2Nov 22, 2022

Substrate placing table and substrate processing apparatus

TOKYO ELECTRON LTD0 citations61
US11217470B2Jan 4, 2022

Substrate placing table and substrate processing apparatus

TOKYO ELECTRON LTD0 citations61
US8569186B2Oct 29, 2013

Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device

TOKYO ELECTRON LTD0 citations51

KOHNO MASAYUKI

4 patents
US8138103B2Mar 20, 2012

Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device

KOHNO MASAYUKI1 citations60
US8329596B2Dec 11, 2012

Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device

KOHNO MASAYUKI0 citations49
US8318614B2Nov 27, 2012

Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus

KOHNO MASAYUKI0 citations39
US8114790B2Feb 14, 2012

Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus

KOHNO MASAYUKI0 citations39

ENDOH TETSUO

1 patent
US8258571B2Sep 4, 2012

MOS semiconductor memory device having charge storage region formed from stack of insulating films

ENDOH TETSUO11 citations83

HONDA MINORU

1 patent
US8119545B2Feb 21, 2012

Forming a silicon nitride film by plasma CVD

HONDA MINORU2 citations59

TOYKO ELECTRON LTD

1 patent
US7915177B2Mar 29, 2011

Method of forming gate insulation film, semiconductor device, and computer recording medium

TOYKO ELECTRON LTD1 citations50