Inventor
MORI SEIICHI
JP90 patents
⚠️ This page may combine multiple inventors who share the name “MORI SEIICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
44 patentsUS6845042B2Jan 18, 2005
Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems
TOSHIBA KK149 citations99
US6713834B2Mar 30, 2004
Semiconductor device having two-layered charge storage electrode
TOSHIBA KK117 citations99
US4990463AFeb 5, 1991
Method of manufacturing capacitor
TOSHIBA KK153 citations99
US7498630B2Mar 3, 2009
Nonvolatile semiconductor memory
TOSHIBA KK52 citations98
US6835978B2Dec 28, 2004
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK43 citations96
US6806132B2Oct 19, 2004
Semiconductor device having two-layered charge storage electrode
TOSHIBA KK35 citations96
US6794708B2Sep 21, 2004
Nonvolatile semiconductor device with floating gate structure
TOSHIBA KK67 citations96
US6661052B2Dec 9, 2003
Semiconductor device and method of manufacturing the same
TOSHIBA KK34 citations96
US5694357ADec 2, 1997
Nonvolatile semiconductor memory device for storing multi-value data
TOSHIBA KK83 citations96
US5304829AApr 19, 1994
Nonvolatile semiconductor device
TOSHIBA KK89 citations96
US5036383AJul 30, 1991
Semiconductor device having an improved bonding pad
TOSHIBA KK83 citations96
US6222773B1Apr 24, 2001
Nonvolatile semiconductor memory in which the number of programming or erasing bits increases with the progress of programming or erasing
TOSHIBA KK48 citations95
US7939406B2May 10, 2011
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK9 citations93
US7573092B2Aug 11, 2009
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK9 citations93
US7420259B2Sep 2, 2008
Semiconductor device having two-layered charge storage electrode
TOSHIBA KK13 citations93
US7118963B2Oct 10, 2006
Semiconductor memory integrated circuit and its manufacturing method
TOSHIBA KK16 citations93
US7061069B2Jun 13, 2006
Semiconductor device having two-layered charge storage electrode
TOSHIBA KK16 citations93
US7049653B2May 23, 2006
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK18 citations93
US6452837B2Sep 17, 2002
Nonvolatile semiconductor memory and threshold voltage control method therefor
TOSHIBA KK22 citations93
US6240021B1May 29, 2001
Nonvolatile semiconductor memory device improved in readout operation
TOSHIBA KK26 citations93
US5736442AApr 7, 1998
Method of manufacturing a semiconductor memory device
TOSHIBA KK46 citations93
US5666311ASep 9, 1997
Method of making semiconductor device having isolating trenches
TOSHIBA KK24 citations93
US5657271AAug 12, 1997
Nonvolatile semiconductor memory device in which band to band tunneling current is suppressed
TOSHIBA KK53 citations93
US5646888AJul 8, 1997
Semiconductor device having isolating regions
TOSHIBA KK23 citations93
US5400344AMar 21, 1995
Semiconductor device with function of testing insulation defect between bit lines and testing method therefor
TOSHIBA KK23 citations93
US5051794ASep 24, 1991
Non-volatile semiconductor memory device and method for manufacturing the same
TOSHIBA KK49 citations93
US5049514ASep 17, 1991
Method of making a MOS device having a polycide gate
TOSHIBA KK25 citations93
US4935378AJun 19, 1990
Method for manufacturing a semiconductor device having more than two conductive layers
TOSHIBA KK31 citations93
US4616402AOct 14, 1986
Method of manufacturing a semiconductor device with a stacked-gate-electrode structure
TOSHIBA KK40 citations93
US7141474B2Nov 28, 2006
Fabrication method of a nonvolatile semiconductor memory
TOSHIBA KK18 citations92
US6900086B2May 31, 2005
Semiconductor device having MISFETs
TOSHIBA KK25 citations92
US6798038B2Sep 28, 2004
Manufacturing method of semiconductor device with filling insulating film into trench
TOSHIBA KK43 citations92
US6376879B2Apr 23, 2002
Semiconductor device having MISFETs
TOSHIBA KK40 citations92
US6078074AJun 20, 2000
Semiconductor device having multilayer metal interconnection
TOSHIBA KK25 citations92
US5025417AJun 18, 1991
Semiconductor memory device capable of preventing data of non-selected memory cell from being degraded
TOSHIBA KK26 citations92
US5019527AMay 28, 1991
Method of manufacturing non-volatile semiconductor memories, in which selective removal of field oxidation film for forming source region and self-adjusted treatment for forming contact portion are simultaneously performed
TOSHIBA KK52 citations92
US6187632B1Feb 13, 2001
Anneal technique for reducing amount of electronic trap in gate oxide film of transistor
TOSHIBA KK21 citations91
US5882994AMar 16, 1999
Nonvolatile semiconductor memory, and method of manufacturing the same
TOSHIBA KK22 citations91
US7557401B2Jul 7, 2009
Semiconductor device and method of manufacturing the same
TOSHIBA KK14 citations84
US6989303B2Jan 24, 2006
Nonvolatile semiconductor device with floating gate structure
TOSHIBA KK12 citations84
US6902976B2Jun 7, 2005
Semiconductor device and method of manufacturing the same
TOSHIBA KK12 citations84
US6927449B2Aug 9, 2005
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK9 citations82
US5208174AMay 4, 1993
Method for manufacturing a nonvolatile semiconductor memory device
TOSHIBA KK19 citations82
US7795667B2Sep 14, 2010
Semiconductor memory preventing an electric short circuit between a word line and a semiconductor substrate, and manufacturing method for the semiconductor memory
TOSHIBA KK7 citations74
ASAHI OPTICAL CO LTD
2 patentsKANEGAFUCHI CHEMICAL IND
1 patentTOKYO SHIBAURA ELECTRIC CO
1 patentMORI MANUFACTORY CO LTD
1 patentIBM
1 patentShowing the top 50 of 90 patents by PatentIndex Score.