P

Inventor

MORI SEIICHI

JP90 patents
⚠️ This page may combine multiple inventors who share the name “MORI SEIICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

44 patents
US6845042B2Jan 18, 2005

Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems

TOSHIBA KK149 citations99
US6713834B2Mar 30, 2004

Semiconductor device having two-layered charge storage electrode

TOSHIBA KK117 citations99
US4990463AFeb 5, 1991

Method of manufacturing capacitor

TOSHIBA KK153 citations99
US7498630B2Mar 3, 2009

Nonvolatile semiconductor memory

TOSHIBA KK52 citations98
US6835978B2Dec 28, 2004

Nonvolatile semiconductor memory device having element isolating region of trench type

TOSHIBA KK43 citations96
US6806132B2Oct 19, 2004

Semiconductor device having two-layered charge storage electrode

TOSHIBA KK35 citations96
US6794708B2Sep 21, 2004

Nonvolatile semiconductor device with floating gate structure

TOSHIBA KK67 citations96
US6661052B2Dec 9, 2003

Semiconductor device and method of manufacturing the same

TOSHIBA KK34 citations96
US5694357ADec 2, 1997

Nonvolatile semiconductor memory device for storing multi-value data

TOSHIBA KK83 citations96
US5304829AApr 19, 1994

Nonvolatile semiconductor device

TOSHIBA KK89 citations96
US5036383AJul 30, 1991

Semiconductor device having an improved bonding pad

TOSHIBA KK83 citations96
US6222773B1Apr 24, 2001

Nonvolatile semiconductor memory in which the number of programming or erasing bits increases with the progress of programming or erasing

TOSHIBA KK48 citations95
US7939406B2May 10, 2011

Nonvolatile semiconductor memory device having element isolating region of trench type

TOSHIBA KK9 citations93
US7573092B2Aug 11, 2009

Nonvolatile semiconductor memory device having element isolating region of trench type

TOSHIBA KK9 citations93
US7420259B2Sep 2, 2008

Semiconductor device having two-layered charge storage electrode

TOSHIBA KK13 citations93
US7118963B2Oct 10, 2006

Semiconductor memory integrated circuit and its manufacturing method

TOSHIBA KK16 citations93
US7061069B2Jun 13, 2006

Semiconductor device having two-layered charge storage electrode

TOSHIBA KK16 citations93
US7049653B2May 23, 2006

Nonvolatile semiconductor memory device having element isolating region of trench type

TOSHIBA KK18 citations93
US6452837B2Sep 17, 2002

Nonvolatile semiconductor memory and threshold voltage control method therefor

TOSHIBA KK22 citations93
US6240021B1May 29, 2001

Nonvolatile semiconductor memory device improved in readout operation

TOSHIBA KK26 citations93
US5736442AApr 7, 1998

Method of manufacturing a semiconductor memory device

TOSHIBA KK46 citations93
US5666311ASep 9, 1997

Method of making semiconductor device having isolating trenches

TOSHIBA KK24 citations93
US5657271AAug 12, 1997

Nonvolatile semiconductor memory device in which band to band tunneling current is suppressed

TOSHIBA KK53 citations93
US5646888AJul 8, 1997

Semiconductor device having isolating regions

TOSHIBA KK23 citations93
US5400344AMar 21, 1995

Semiconductor device with function of testing insulation defect between bit lines and testing method therefor

TOSHIBA KK23 citations93
US5051794ASep 24, 1991

Non-volatile semiconductor memory device and method for manufacturing the same

TOSHIBA KK49 citations93
US5049514ASep 17, 1991

Method of making a MOS device having a polycide gate

TOSHIBA KK25 citations93
US4935378AJun 19, 1990

Method for manufacturing a semiconductor device having more than two conductive layers

TOSHIBA KK31 citations93
US4616402AOct 14, 1986

Method of manufacturing a semiconductor device with a stacked-gate-electrode structure

TOSHIBA KK40 citations93
US7141474B2Nov 28, 2006

Fabrication method of a nonvolatile semiconductor memory

TOSHIBA KK18 citations92
US6900086B2May 31, 2005

Semiconductor device having MISFETs

TOSHIBA KK25 citations92
US6798038B2Sep 28, 2004

Manufacturing method of semiconductor device with filling insulating film into trench

TOSHIBA KK43 citations92
US6376879B2Apr 23, 2002

Semiconductor device having MISFETs

TOSHIBA KK40 citations92
US6078074AJun 20, 2000

Semiconductor device having multilayer metal interconnection

TOSHIBA KK25 citations92
US5025417AJun 18, 1991

Semiconductor memory device capable of preventing data of non-selected memory cell from being degraded

TOSHIBA KK26 citations92
US5019527AMay 28, 1991

Method of manufacturing non-volatile semiconductor memories, in which selective removal of field oxidation film for forming source region and self-adjusted treatment for forming contact portion are simultaneously performed

TOSHIBA KK52 citations92
US6187632B1Feb 13, 2001

Anneal technique for reducing amount of electronic trap in gate oxide film of transistor

TOSHIBA KK21 citations91
US5882994AMar 16, 1999

Nonvolatile semiconductor memory, and method of manufacturing the same

TOSHIBA KK22 citations91
US7557401B2Jul 7, 2009

Semiconductor device and method of manufacturing the same

TOSHIBA KK14 citations84
US6989303B2Jan 24, 2006

Nonvolatile semiconductor device with floating gate structure

TOSHIBA KK12 citations84
US6902976B2Jun 7, 2005

Semiconductor device and method of manufacturing the same

TOSHIBA KK12 citations84
US6927449B2Aug 9, 2005

Nonvolatile semiconductor memory device having element isolating region of trench type

TOSHIBA KK9 citations82
US5208174AMay 4, 1993

Method for manufacturing a nonvolatile semiconductor memory device

TOSHIBA KK19 citations82
US7795667B2Sep 14, 2010

Semiconductor memory preventing an electric short circuit between a word line and a semiconductor substrate, and manufacturing method for the semiconductor memory

TOSHIBA KK7 citations74

ASAHI OPTICAL CO LTD

2 patents

KANEGAFUCHI CHEMICAL IND

1 patent

TOKYO SHIBAURA ELECTRIC CO

1 patent

MORI MANUFACTORY CO LTD

1 patent

IBM

1 patent

Showing the top 50 of 90 patents by PatentIndex Score.