Inventor

KUO CHARLES C

US80 patents

⚠️ This page may combine multiple inventors who share the name “KUO CHARLES C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUO CHARLES C

INTEL CORP

Phase change memory with damascene memory element

Balancing energy barrier between states in perpendicular magnetic tunnel junctions

Programming a normally single phase chalcogenide material for use as a memory or FPLA

Forming phase change memory arrays

Techniques for forming non-planar resistive memory cells

Spin-transfer torque memory (STTM) devices having magnetic contacts

Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer

Hybrid phase field effect transistor

Hybrid phase field effect transistor

Vertical nanowire transistor with axially engineered semiconductor and gate metallization

Low stray field magnetic memory

Perpendicular magnetic memory with symmetric fixed layers

Spin-transfer torque memory (STTM) devices having magnetic contacts

Vertical transistor devices for embedded memory and logic technologies

Techniques and configurations for stacking transistors of an integrated circuit device

Techniques for forming spin-transfer torque memory (STTM) elements having annular contacts

High stability spintronic memory

Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

Electric field enhanced spin transfer torque memory (STTM) device

High stability spintronic memory

Perpendicular STTM multi-layer insert free layer

Self-aligned embedded phase change memory cell having a fin shaped bottom electrode

Perpendicular magnetic memory with reduced switching current

Unipolar current switching in perpendicular magnetic tunnel junction (pMTJ) devices through reduced bipolar coercivity

Functional metal oxide based microelectronic devices

Perpendicular magnetic memory with filament conduction path

Vertical nanowire transistor with axially engineered semiconductor and gate metallization

DOYLE BRIAN S

Vertical transistor devices for embedded memory and logic technologies

Vertical nanowire transistor with axially engineered semiconductor and gate metallization

Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same

Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same

Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

Electric field enhanced spin transfer torque memory (STTM) device

Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same

OVONYX INC

Multi-level phase change memory

Programming a normally single phase chalcogenide material for use as a memory of FPLA

Electrostatic discharge protection circuit including ovonic threshold switches

KARPOV ILYA V

Phase change memory with damascene memory element

Manufacturing a phase change memory device having a ring heater

GOODRICH CO B F

Process for pelletization of powder materials and products therefrom

Method for the suspension of plastic additives with rheology agents

KIM YUDONG

Dual resistance heater for phase change devices and manufacturing method thereof

Dual resistance heater for phase change devices and manufacturing method thereof

ROHM & HAAS ELECT MAT

Window polishing pad

PILLARISETTY RAVI

Techniques and configuration for stacking transistors of an integrated circuit device

KARPOV ELIJAH V

Low voltage embedded memory having cationic-based conductive oxide element

MICRON TECHNOLOGY INC

Dual resistance heater for phase change devices and manufacturing method thereof

STMICROELETRONICS S R L

Phase change memory and manufacturing method thereof

UNIV CALIFORNIA

Method and apparatus for capacitorless double-gate storage

KUO CHARLES C

Phase change memory with U-shaped chalcogenide cell