P

Inventor

KAMATH ARVIND

US57 patents
⚠️ This page may combine multiple inventors who share the name “KAMATH ARVIND”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LSI LOGIC CORP

17 patents
US6617251B1Sep 9, 2003

Method of shallow trench isolation formation and planarization

LSI LOGIC CORP73 citations92
US6521549B1Feb 18, 2003

Method of reducing silicon oxynitride gate insulator thickness in some transistors of a hybrid integrated circuit to obtain increased differential in gate insulator thickness with other transistors of the hybrid circuit

LSI LOGIC CORP39 citations92
US6680243B1Jan 20, 2004

Shallow junction formation

LSI LOGIC CORP59 citations91
US7001823B1Feb 21, 2006

Method of manufacturing a shallow trench isolation structure with low trench parasitic capacitance

LSI LOGIC CORP11 citations84
US6544829B1Apr 8, 2003

Polysilicon gate salicidation

LSI LOGIC CORP15 citations82
US7026217B1Apr 11, 2006

Method of forming an antifuse on a semiconductor substrate using wet oxidation of a nitrided substrate

LSI LOGIC CORP15 citations80
US6656805B2Dec 2, 2003

Method of reducing silicon oxynitride gate insulator thickness in some transistors of a hybrid integrated circuit to obtain increased differential in gate insulator thickness with other transistors of the hybrid circuit

LSI LOGIC CORP5 citations73
US6562729B2May 13, 2003

Silicon nitride and silicon dioxide gate insulator transistors and method of forming same in a hybrid integrated circuit

LSI LOGIC CORP9 citations72
US6436845B1Aug 20, 2002

Silicon nitride and silicon dioxide gate insulator transistors and method of forming same in a hybrid integrated circuit

LSI LOGIC CORP13 citations72
US6586814B1Jul 1, 2003

Etch resistant shallow trench isolation in a semiconductor wafer

LSI LOGIC CORP11 citations71
US6687114B1Feb 3, 2004

High density memory with storage capacitor

LSI LOGIC CORP4 citations63
US6569739B1May 27, 2003

Method of reducing the effect of implantation damage to shallow trench isolation regions during the formation of variable thickness gate layers

LSI LOGIC CORP6 citations63
US8021955B1Sep 20, 2011

Method characterizing materials for a trench isolation structure having low trench parasitic capacitance

LSI LOGIC CORP3 citations62
US6812158B1Nov 2, 2004

Modular growth of multiple gate oxides

LSI LOGIC CORP5 citations61
US6949446B1Sep 27, 2005

Method of shallow trench isolation formation and planarization

LSI LOGIC CORP2 citations59
US6989331B2Jan 24, 2006

Hard mask removal

LSI LOGIC CORP4 citations58
US6586291B1Jul 1, 2003

High density memory with storage capacitor

LSI LOGIC CORP0 citations52

KAMATH ARVIND

8 patents

THIN FILM ELECTRONICS ASA

7 patents

KOVIO INC

4 patents

CHANDRA ADITI

4 patents

VAN DER LINDE RICHARD

2 patents

LSI CORP

1 patent

ROCKENBERGER JOERG

1 patent

SMITH PATRICK

1 patent

SCHER ERIK

1 patent

WANG ZHONGCHUN

1 patent

CLEEVES JAMES MONTAGUE

1 patent

GUO WENZHUO

1 patent

SUBRAMANIAN VIVEK

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.