Inventor
ROH UKJIN
US5 patents
Patents
5 patentsUS9634138B1Apr 25, 2017
Field-effect transistor (FET) devices employing adjacent asymmetric active gate / dummy gate width layout
QUALCOMM INC15 citations82
US10062768B2Aug 28, 2018
Field-effect transistor (FET) devices employing adjacent asymmetric active gate / dummy gate width layout
QUALCOMM INC3 citations71
US9882051B1Jan 30, 2018
Fin field effect transistors (FETs) (FinFETs) employing dielectric material layers to apply stress to channel regions
QUALCOMM INC4 citations71
US11075206B2Jul 27, 2021
SRAM source-drain structure
QUALCOMM INC0 citations60
US10304957B2May 28, 2019
FinFET with reduced series total resistance
QUALCOMM INC1 citations59