Inventor
LIU SU-HAO
TW83 patents
⚠️ This page may combine multiple inventors who share the name “LIU SU-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
45 patentsUS9093514B2Jul 28, 2015
Strained and uniform doping technique for FINFETs
TAIWAN SEMICONDUCTOR MFG CO LTD518 citations96
US10347762B1Jul 9, 2019
Field effect transistor contact with reduced contact resistance using implantation process
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations94
US11456383B2Sep 27, 2022
Semiconductor device having a contact plug with an air gap spacer
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US10658510B2May 19, 2020
Source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9812451B2Nov 7, 2017
Field effect transistor contact with reduced contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11289417B2Mar 29, 2022
Semiconductor device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10763168B2Sep 1, 2020
Semiconductor structure with doped via plug and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations82
US11848361B2Dec 19, 2023
Sacrificial layer for semiconductor process
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11257911B2Feb 22, 2022
Sacrificial layer for semiconductor process
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11257952B2Feb 22, 2022
Source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11227918B2Jan 18, 2022
Melt anneal source and drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10868178B2Dec 15, 2020
Field effect transistor contact with reduced contact resistance using implantation process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10515963B2Dec 24, 2019
Field effect transistor contact with reduced contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10347720B2Jul 9, 2019
Doping for semiconductor device with conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10269799B2Apr 23, 2019
Field effect transistor contact with reduced contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11211289B2Dec 28, 2021
Metal loss prevention using implantation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11145751B2Oct 12, 2021
Semiconductor structure with doped contact plug and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US10643892B2May 5, 2020
Metal loss prevention using implantation
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11515206B2Nov 29, 2022
Semiconductor structure with doped via plug
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US12557623B2Feb 17, 2026
Semiconductor device with connecting structure having a doped layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12501647B2Dec 16, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12300740B2May 13, 2025
Metal layer protection during wet etching
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12205994B2Jan 21, 2025
Sacrificial layer for semiconductor process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12087847B2Sep 10, 2024
Variable size fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12009305B2Jun 11, 2024
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11984491B2May 14, 2024
Metal layer protection during wet etching
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11955553B2Apr 9, 2024
Source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11791204B2Oct 17, 2023
Semiconductor device with connecting structure having a doped layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11652053B2May 16, 2023
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11646377B2May 9, 2023
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11594636B2Feb 28, 2023
Source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11380782B2Jul 5, 2022
Variable size fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11049972B2Jun 29, 2021
Formation method of semiconductor device with low resistance contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12484240B2Nov 25, 2025
Semiconductor device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12432963B2Sep 30, 2025
Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12419099B2Sep 16, 2025
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12368098B2Jul 22, 2025
Methods of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12224327B2Feb 11, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183632B2Dec 31, 2024
Bottom lateral expansion of contact plugs through implantation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12154949B2Nov 26, 2024
Transistor contacts and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12112977B2Oct 8, 2024
Reducing spacing between conductive features through implantation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107086B2Oct 1, 2024
Field effect transistor contact with reduced contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068195B2Aug 20, 2024
Metal loss prevention using implantation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12015055B2Jun 18, 2024
Doping for semiconductor device with conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11973027B2Apr 30, 2024
Semiconductor device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
3 patentsUS9029226B2May 12, 2015
Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devices
TAIWAN SEMICONDUCTOR MFG25 citations93
US9379208B2Jun 28, 2016
Integrated circuits and methods of forming integrated circuits
TAIWAN SEMICONDUCTOR MFG2 citations63
US9117745B2Aug 25, 2015
Mechanisms for forming stressor regions in a semiconductor device
TAIWAN SEMICONDUCTOR MFG2 citations63
TSAI CHUN HSIUNG
2 patentsShowing the top 50 of 83 patents by PatentIndex Score.