Inventor

CHOI HANMEI

KR26 patents

⚠️ This page may combine multiple inventors who share the name “CHOI HANMEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHOI HANMEI

SAMSUNG ELECTRONICS CO LTD

Vertical memory devices having dummy channel regions

Vertical memory devices having dummy channel regions

Three-dimensional semiconductor memory devices and methods of fabricating the same

Three-dimensional semiconductor memory devices and methods of fabricating the same

Three dimensional semiconductor memory device and method of manufacturing the same

Semiconductor device and method of fabricating the same

Nonvolatile semiconductor devices including non-circular shaped channel patterns and methods of manufacturing the same

Three-dimensional semiconductor memory devices and methods of fabricating the same

Semiconductor devices including gate dielectric structures

Vertical memory devices having dummy channel regions

Semiconductor device

Methods of thermally treating a semiconductor wafer

Three-dimensional semiconductor memory devices and methods of fabricating the same

Three-dimensional semiconductor memory devices and methods of fabricating the same

Semiconductor device having vertical fence structures

Semiconductor device including trench isolation layer and method of forming the same

Semiconductor device including trench isolation layer and method of forming the same

Semiconductor device

Three dimensional semiconductor memory device and method of manufacturing the same

Semiconductor device and method of fabricating the same

Semiconductor device with an epitaxial layer and method of fabricating the same

Semiconductor device and method for fabricating the same

SEOL KWANG SOO

Three-dimensional semiconductor memory devices and methods of fabricating the same

SON YONG HOON

Nonvolatile semiconductor devices including non-circular shaped channel patterns and methods of manufacturing the same

CHAE SOODOO

Three dimensional semiconductor memory devices and methods of manufacturing the same

JANG BYONG-HYUN

Methods of manufacturing three dimensional semiconductor memory devices using sub-plates