Inventor
RASCUNÁ SIMONE
IT14 patents
⚠️ This page may combine multiple inventors who share the name “RASCUNÁ SIMONE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
13 patentsUS11018008B2May 25, 2021
Manufacturing method of a semiconductor device with efficient edge structure
ST MICROELECTRONICS SRL1 citations71
US11916066B2Feb 27, 2024
MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof
ST MICROELECTRONICS SRL0 citations61
US11869944B2Jan 9, 2024
Scalable MPS device based on SiC
ST MICROELECTRONICS SRL1 citations61
US11270993B2Mar 8, 2022
MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof
ST MICROELECTRONICS SRL0 citations61
US12302624B2May 13, 2025
Wide band gap semiconductor electronic device having a junction-barrier Schottky diode
ST MICROELECTRONICS SRL0 citations60
US11949025B2Apr 2, 2024
Wide band gap semiconductor electronic device having a junction-barrier Schottky diode
ST MICROELECTRONICS SRL0 citations60
US11670685B2Jun 6, 2023
Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device
ST MICROELECTRONICS SRL0 citations58
US12125933B2Oct 22, 2024
Method for manufacturing a uv-radiation detector device based on sic, and uv- radiation detector device based on sic
ST MICROELECTRONICS SRL0 citations57
US11605751B2Mar 14, 2023
Method for manufacturing a UV-radiation detector device based on SiC, and UV-radiation detector device based on SiC
ST MICROELECTRONICS SRL0 citations57
US12224321B2Feb 11, 2025
Scalable MPS device based on SiC
ST MICROELECTRONICS SRL0 citations51
US10707202B2Jul 7, 2020
MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof
ST MICROELECTRONICS SRL0 citations51
US12249624B2Mar 11, 2025
Ohmic contact formation in a SiC-based electronic device
ST MICROELECTRONICS SRL0 citations50
US12539541B2Feb 3, 2026
Silver nanoparticles synthesis method for low temperature and pressure sintering
ST MICROELECTRONICS SRL0 citations37