P

Inventor

NOH CHANG WOO

KR13 patents

Patents

13 patents
US10396205B2Aug 27, 2019

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD7 citations82
US10937787B2Mar 2, 2021

Semiconductor devices having different numbers of stacked channels in different regions and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations81
US11133383B2Sep 28, 2021

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US11024628B2Jun 1, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD5 citations73
US10978299B2Apr 13, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD5 citations73
US10903324B2Jan 26, 2021

Semiconductor device including fin-FET and etch stop layers

SAMSUNG ELECTRONICS CO LTD3 citations73
US9966376B2May 8, 2018

Semiconductor devices and inverter having the same

SAMSUNG ELECTRONICS CO LTD6 citations72
US11705503B2Jul 18, 2023

Semiconductor device including non-sacrificial gate spacers and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US11742411B2Aug 29, 2023

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11710741B2Jul 25, 2023

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11699728B2Jul 11, 2023

Semiconductor device including fin-FET and misaligned source and drain contacts

SAMSUNG ELECTRONICS CO LTD0 citations62
US12051694B2Jul 30, 2024

Semiconductor devices having different numbers of stacked channels in different regions

SAMSUNG ELECTRONICS CO LTD0 citations59
US11581312B2Feb 14, 2023

Semiconductor devices having different numbers of stacked channels in different regions and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations53