P

Inventor

YANG JUNG GIL

KR44 patents
⚠️ This page may combine multiple inventors who share the name “YANG JUNG GIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

42 patents
US10243040B1Mar 26, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD38 citations94
US9929235B1Mar 27, 2018

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD18 citations94
US9412816B2Aug 9, 2016

Semiconductor device including multiple nanowire transistor

SAMSUNG ELECTRONICS CO LTD25 citations94
US9324812B2Apr 26, 2016

Semiconductor device including nanowire transistor

SAMSUNG ELECTRONICS CO LTD24 citations94
US9978835B2May 22, 2018

Semiconductor device including nanowire transistor

SAMSUNG ELECTRONICS CO LTD15 citations92
US11107822B2Aug 31, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations84
US10930649B2Feb 23, 2021

Integrated circuit (IC) device

SAMSUNG ELECTRONICS CO LTD5 citations84
US10872983B2Dec 22, 2020

Semiconductor devices and manufacturing methods thereof

SAMSUNG ELECTRONICS CO LTD9 citations84
US10629740B2Apr 21, 2020

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US10431585B2Oct 1, 2019

Semiconductor devices with multi-gate structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US10181510B2Jan 15, 2019

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US10128379B2Nov 13, 2018

Semiconductor device having channel regions

SAMSUNG ELECTRONICS CO LTD14 citations84
US10566331B1Feb 18, 2020

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations83
US11923362B2Mar 5, 2024

Integrated circuit (IC) device

SAMSUNG ELECTRONICS CO LTD1 citations73
US11894379B2Feb 6, 2024

Semiconductor devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US11735629B2Aug 22, 2023

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US11676964B2Jun 13, 2023

Integrated circuit (IC) device

SAMSUNG ELECTRONICS CO LTD1 citations73
US11444081B2Sep 13, 2022

Integrated circuit (IC) device

SAMSUNG ELECTRONICS CO LTD3 citations73
US11393929B2Jul 19, 2022

Semiconductor devices and manufacturing methods thereof

SAMSUNG ELECTRONICS CO LTD4 citations73
US11367723B2Jun 21, 2022

Semiconductor devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US11309421B2Apr 19, 2022

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US11222949B2Jan 11, 2022

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US11164943B2Nov 2, 2021

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US11024628B2Jun 1, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD5 citations73
US10784344B2Sep 22, 2020

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US10756179B2Aug 25, 2020

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US10014393B2Jul 3, 2018

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US12199099B2Jan 14, 2025

Semiconductor devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11923456B2Mar 5, 2024

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11908952B2Feb 20, 2024

Semiconductor devices and manufacturing methods thereof

SAMSUNG ELECTRONICS CO LTD0 citations62
US11710741B2Jul 25, 2023

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11683925B2Jun 20, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11640973B2May 2, 2023

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US10923476B2Feb 16, 2021

Semiconductor devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US9515147B2Dec 6, 2016

Semiconductor device including nanowire transistor

SAMSUNG ELECTRONICS CO LTD2 citations62
US12107135B2Oct 1, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11967614B2Apr 23, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11322589B2May 3, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11139382B2Oct 5, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US10665723B2May 26, 2020

Semiconductor device having channel regions

SAMSUNG ELECTRONICS CO LTD0 citations52
US10347718B2Jul 9, 2019

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9129815B2Sep 8, 2015

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations50

YANG JUNG-GIL

1 patent

KWON TAE-YONG

1 patent