Inventor
WU YI-TING
TW26 patents
⚠️ This page may combine multiple inventors who share the name “WU YI-TING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
20 patentsUS6586303B2Jul 1, 2003
Method for fabricating a mask ROM
UNITED MICROELECTRONICS CORP13 citations83
US9508799B2Nov 29, 2016
Substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation
UNITED MICROELECTRONICS CORP6 citations82
US11238912B1Feb 1, 2022
Magnetoresistive random-access memory
UNITED MICROELECTRONICS CORP3 citations71
US10651235B1May 12, 2020
2-transistor 2-magnetic tunnel junction (2T2MTJ) MRAM structure
UNITED MICROELECTRONICS CORP4 citations69
US12340830B2Jun 24, 2025
Spin-orbit torque magnetic random access memory circuit and layout thereof
UNITED MICROELECTRONICS CORP1 citations64
US12190926B2Jan 7, 2025
Layout pattern of magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations62
US12349369B2Jul 1, 2025
Layout pattern of magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations61
US12178052B2Dec 24, 2024
MRAM circuit structure and layout structure
UNITED MICROELECTRONICS CORP1 citations61
US12063791B2Aug 13, 2024
Layout pattern of magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations61
US11943935B2Mar 26, 2024
Layout pattern of magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations61
US11942130B2Mar 26, 2024
Bottom-pinned spin-orbit torque magnetic random access memory and method of manufacturing the same
UNITED MICROELECTRONICS CORP0 citations61
US11903325B2Feb 13, 2024
Magnetic memory device having shared source line and bit line
UNITED MICROELECTRONICS CORP0 citations61
US11489010B2Nov 1, 2022
Layout pattern of magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations61
US11355695B2Jun 7, 2022
Magnetic memory device having shared source line and bit line
UNITED MICROELECTRONICS CORP0 citations61
US10978122B1Apr 13, 2021
Memory including non-volatile cells and current driving circuit
UNITED MICROELECTRONICS CORP0 citations60
US11955154B2Apr 9, 2024
Sense amplifier circuit with temperature compensation
UNITED MICROELECTRONICS CORP0 citations51
US9632115B2Apr 25, 2017
Method for deriving characteristic values of MOS transistor
UNITED MICROELECTRONICS CORP1 citations51
US9793296B2Oct 17, 2017
Method for fabricating substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation
UNITED MICROELECTRONICS CORP0 citations50
US11018185B1May 25, 2021
Layout pattern for magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations49
US9299839B2Mar 29, 2016
PFET and CMOS containing same
UNITED MICROELECTRONICS CORP0 citations39