P

Inventor

WU YI-TING

TW26 patents
⚠️ This page may combine multiple inventors who share the name “WU YI-TING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

20 patents
US6586303B2Jul 1, 2003

Method for fabricating a mask ROM

UNITED MICROELECTRONICS CORP13 citations83
US9508799B2Nov 29, 2016

Substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation

UNITED MICROELECTRONICS CORP6 citations82
US11238912B1Feb 1, 2022

Magnetoresistive random-access memory

UNITED MICROELECTRONICS CORP3 citations71
US10651235B1May 12, 2020

2-transistor 2-magnetic tunnel junction (2T2MTJ) MRAM structure

UNITED MICROELECTRONICS CORP4 citations69
US12340830B2Jun 24, 2025

Spin-orbit torque magnetic random access memory circuit and layout thereof

UNITED MICROELECTRONICS CORP1 citations64
US12190926B2Jan 7, 2025

Layout pattern of magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations62
US12349369B2Jul 1, 2025

Layout pattern of magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US12178052B2Dec 24, 2024

MRAM circuit structure and layout structure

UNITED MICROELECTRONICS CORP1 citations61
US12063791B2Aug 13, 2024

Layout pattern of magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US11943935B2Mar 26, 2024

Layout pattern of magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US11942130B2Mar 26, 2024

Bottom-pinned spin-orbit torque magnetic random access memory and method of manufacturing the same

UNITED MICROELECTRONICS CORP0 citations61
US11903325B2Feb 13, 2024

Magnetic memory device having shared source line and bit line

UNITED MICROELECTRONICS CORP0 citations61
US11489010B2Nov 1, 2022

Layout pattern of magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US11355695B2Jun 7, 2022

Magnetic memory device having shared source line and bit line

UNITED MICROELECTRONICS CORP0 citations61
US10978122B1Apr 13, 2021

Memory including non-volatile cells and current driving circuit

UNITED MICROELECTRONICS CORP0 citations60
US11955154B2Apr 9, 2024

Sense amplifier circuit with temperature compensation

UNITED MICROELECTRONICS CORP0 citations51
US9632115B2Apr 25, 2017

Method for deriving characteristic values of MOS transistor

UNITED MICROELECTRONICS CORP1 citations51
US9793296B2Oct 17, 2017

Method for fabricating substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation

UNITED MICROELECTRONICS CORP0 citations50
US11018185B1May 25, 2021

Layout pattern for magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations49
US9299839B2Mar 29, 2016

PFET and CMOS containing same

UNITED MICROELECTRONICS CORP0 citations39

WENG CHAO-FU

1 patent

WENG CHAOFU

1 patent

WANG YU-JING

1 patent

Wang yu-chao

1 patent

LEE SI-CHEN

1 patent

INTERFACE TECH CHENGDU CO LTD

1 patent