Inventor

LIM JONG WON

KR54 patents

⚠️ This page may combine multiple inventors who share the name “LIM JONG WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIM JONG WON

KOREA ELECTRONICS TELECOMM

Automatic gain control feedback amplifier

Field effect transistor and method for manufacturing the same

Method of fabricating pseudomorphic high electron mobility transistor

Field effect transistor and method for manufacturing the same

Submount for opto-electronic module and packaging method using the same

Feedback amplifier

Transistor and method of fabricating the same

Method of manufacturing field effect type compound semiconductor device

Wafer level packaged GaN power semiconductor device and the manufacturing method thereof

Semiconductor device with T-gate electrode

High-isolation switching device for millimeter-wave band control circuit

Semiconductor device and method of fabricating the same

Method for fabricating field effect transistor using a compound semiconductor

Method of manufacturing field effect transistor

Power device having connection structure compensating for reactance component of transmission line

High electron mobility transistor and manufacturing method thereof

GaN transistor with improved bonding pad structure and method of fabricating the same

Semiconductor device having stable gate structure and method of manufacturing the same

Transistor and method of fabricating the same

Nitride electronic device and method for manufacturing the same

Transistor of semiconductor device and method of fabricating the same

Transistor or semiconductor device comprising ohmic contact in an epitaxy substrate

Electronic chip and method of fabricating the same

Hetero junction bipolar transistor and method of manufacturing the same

ELECTRONICS & TELECOMMUNICATIONS RES INST

Field effect transistor and method of fabricating the same

Feedback amplifier

Semiconductor device and fabrication method thereof

Cascode switch circuit including level shifter

Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the same

Semiconductor device with high heat dissipation property using hexagonal boron nitride and method of manufacturing the same

High-electron-mobility transistor device and method of manufacturing the same

Semiconductor device and method of fabricating the same

Component package including matching circuit and matching method thereof

High electron mobility transistor and fabrication method thereof

High reliability field effect power device and manufacturing method thereof

Electrical circuit of semiconductor channel resistor and apparatus and method for generating the same

LG ERICSSON CO LTD

Communication terminal with movable display

Communication terminal having housing with key buttons coupled thereto

AHN HOKYUN

Semiconductor devices and methods of forming thereof

Method of manufacturing a field-effect transistor

BAE SUNG BUM

Nitride electronic device and method for manufacturing the same

YOON HYUNG SUP

Semiconductor device including stepped gate electrode and fabrication method thereof

KIM SEONG-IL

Vertical capacitors and methods of forming the same

ELECT & TELECOMM RESEARCH INST

Method of manufacturing a self-aligned gate transistor with P-type impurities selectively implanted below the gate, source and drain electrodes

KLINELEX CO LTD

Electric vehicle rapid charging apparatus having sensor for controlling automatic pull-out of charging cable

ELECTRONICS AND TELECOMMINUCATION RES INST

Switching circuit for millimeter waveband control circuit

KANG DONG MIN

Power amplifier having depletion mode high electron mobility transistor

LEE SANG-HEUNG

High-speed optical interconnection device

LG NORTEL CO LTD

Wire communication terminal having LCD module

CHANG WOO JIN

Power semiconductor device and fabrication method thereof