Inventor
TUNG HUAI-JEN
TW23 patents
⚠️ This page may combine multiple inventors who share the name “TUNG HUAI-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS10283548B1May 7, 2019
CMOS sensors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11183572B2Nov 23, 2021
Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11901390B2Feb 13, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11888074B2Jan 30, 2024
Flash memory device with three-dimensional half flash structure and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11658248B2May 23, 2023
Flash memory device with three-dimensional half flash structure and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10879289B1Dec 29, 2020
Method for forming a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11532658B2Dec 20, 2022
Image sensor grid and method of fabrication of same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US12402362B2Aug 26, 2025
Flash memory device with three-dimensional half structure and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218253B2Feb 4, 2025
Flash memory device with three dimensional half flash structure and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199159B2Jan 14, 2025
Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11728399B2Aug 15, 2023
Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12364049B2Jul 15, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11177308B2Nov 16, 2021
CMOS sensors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12191338B2Jan 7, 2025
Image sensor device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11652127B2May 16, 2023
Image sensor device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12261188B2Mar 25, 2025
Image sensor device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11903193B2Feb 13, 2024
Two dimensional structure to control flash operation and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11792981B2Oct 17, 2023
Two dimensional structure to control flash operation and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11502123B2Nov 15, 2022
Methods for forming image sensor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US11164903B2Nov 2, 2021
Image sensor with pad structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US12444660B2Oct 14, 2025
Test structure for void and topography monitoring in a flash memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations45