Inventor

IMAI KATSUHIRO

JP70 patents

⚠️ This page may combine multiple inventors who share the name “IMAI KATSUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IMAI KATSUHIRO

NGK INSULATORS LTD

Single crystal-growing apparatus

Single crystal growing method

Method for producing gallium nitride layer and seed crystal substrate used in same

Single crystal-growing method and apparatus

Method and apparatus for producing oxide series single crystals

Second harmonic generation element and a process for producing the same

Surface light-emission element using zinc oxide substrate

Photovoltaic element

Process and apparatus for producing a planar body of an oxide single crystal

Group-III element nitride semiconductor substrate

Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor

Method for producing AlN single crystal and AlN single crystal

Second harmonic wave-generating element

Underlying substrate including a seed crystal layer of a group 13 nitride having stripe-shaped projections and recesses and an off-angle in a direction of an a-axis

Method for manufacturing single crystal of nitride

Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal

Process for producing a planar body of an oxide single crystal

Process for producing a planar body of an oxide single crystal

Process and apparatus for producing oxide single crystals

Process for producing a raw material powder to grow a single crystal and the single crystal

Group-III element nitride semiconductor substrate

Group III element nitride substrate and production method for group III element nitride substrate

Group 13 nitride layer, composite substrate, and functional element

Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same

Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same

Polycrystalline gallium nitride self-supported substrate and light emitting element using same

Supporting substrate for composite substrate and composite substrate

Free-standing substrate, function element and method for producing same

Composite substrate for light-emitting element and production method therefor

Method for producing zinc oxide single crystal

Method for forming a single crystal by spraying the raw material onto a seed substrate

Gallium nitride substrates and functional devices

Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor

Zinc oxide powder and process for manufacturing same

Zinc oxide sputtering target and method for producing same

Composite substrates and functional device

Method for manufacturing III metal nitride single crystal

SEIKO EPSON CORP

MEMs device and electronic device

Piezoelectric device having plurality of vibrating regions and electronic apparatus

Ultrasonic element and ultrasonic device

NIPPON ZEON CO

Developer and finely particulate polymer

Tones for development of electrostatic image and production process thereof

TOYODA GOSEI KK

Method for producing semiconductor crystal

Crystal growing apparatus

EPSON IMAGING DEVICES CORP

Liquid crystal device and electronic apparatus

SHIBATA NAOKI

Semiconductor substrate, electronic device, optical device, and production methods therefor

IWAI MAKOTO

Gallium nitride single crystal growing method and gallium nitride single crystal

NAGAI SEIJI

N-type group III nitride-based compound semiconductor and production method therefor

HARADA NORIHITO

Liquid crystal device

IMAI KATSUHIRO

Liquid crystal display panel and method for manufacturing the same