P

Inventor

SILVESTRI VICTOR J

US24 patents
⚠️ This page may combine multiple inventors who share the name “SILVESTRI VICTOR J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

23 patents
US5234535AAug 10, 1993

Method of producing a thin silicon-on-insulator layer

IBM197 citations98
US5220405AJun 15, 1993

Interferometer for in situ measurement of thin film thickness changes

IBM65 citations96
US4758531AJul 19, 1988

Method of making defect free silicon islands using SEG

IBM100 citations96
US4745081AMay 17, 1988

Method of trench filling

IBM67 citations96
US4528047AJul 9, 1985

Method for forming a void free isolation structure utilizing etch and refill techniques

IBM105 citations96
US5227658AJul 13, 1993

Buried air dielectric isolation of silicon islands

IBM63 citations95
US4473598ASep 25, 1984

Method of filling trenches with silicon and structures

IBM74 citations95
US5392124AFeb 21, 1995

Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control

IBM52 citations92
US5386121AJan 31, 1995

In situ, non-destructive CVD surface monitor

IBM24 citations92
US5381234AJan 10, 1995

Method and apparatus for real-time film surface detection for large area wafers

IBM36 citations92
US5315151AMay 24, 1994

Transistor structure utilizing a deposited epitaxial base region

IBM34 citations92
US5232866AAug 3, 1993

Isolated films using an air dielectric

IBM48 citations92
US4924284AMay 8, 1990

Method of trench filling

IBM41 citations92
US5061652AOct 29, 1991

Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure

IBM53 citations91
US4381818AMay 3, 1983

Porous film heat transfer

IBM54 citations91
US4689656AAug 25, 1987

Method for forming a void free isolation pattern and resulting structure

IBM41 citations89
US4728624AMar 1, 1988

Selective epitaxial growth structure and isolation

IBM14 citations82
US3974003AAug 10, 1976

Chemical vapor deposition of dielectric films containing Al, N, and Si

IBM22 citations78
US4908691AMar 13, 1990

Selective epitaxial growth structure and isolation

IBM5 citations74
US4425574AJan 10, 1984

Buried injector memory cell formed from vertical complementary bipolar transistor circuits and method of fabrication therefor

IBM16 citations74
US4274891AJun 23, 1981

Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition

IBM15 citations74
US5159429AOct 27, 1992

Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same

IBM9 citations72
US4960717AOct 2, 1990

Fabrication of dielectrically isolated integrated circuit devices

IBM2 citations63

BEYER KLAUS D

1 patent