Inventor
SILVESTRI VICTOR J
US24 patents
⚠️ This page may combine multiple inventors who share the name “SILVESTRI VICTOR J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
23 patentsUS5234535AAug 10, 1993
Method of producing a thin silicon-on-insulator layer
IBM197 citations98
US5220405AJun 15, 1993
Interferometer for in situ measurement of thin film thickness changes
IBM65 citations96
US4758531AJul 19, 1988
Method of making defect free silicon islands using SEG
IBM100 citations96
US4745081AMay 17, 1988
Method of trench filling
IBM67 citations96
US4528047AJul 9, 1985
Method for forming a void free isolation structure utilizing etch and refill techniques
IBM105 citations96
US5227658AJul 13, 1993
Buried air dielectric isolation of silicon islands
IBM63 citations95
US4473598ASep 25, 1984
Method of filling trenches with silicon and structures
IBM74 citations95
US5392124AFeb 21, 1995
Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control
IBM52 citations92
US5386121AJan 31, 1995
In situ, non-destructive CVD surface monitor
IBM24 citations92
US5381234AJan 10, 1995
Method and apparatus for real-time film surface detection for large area wafers
IBM36 citations92
US5315151AMay 24, 1994
Transistor structure utilizing a deposited epitaxial base region
IBM34 citations92
US5232866AAug 3, 1993
Isolated films using an air dielectric
IBM48 citations92
US4924284AMay 8, 1990
Method of trench filling
IBM41 citations92
US5061652AOct 29, 1991
Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure
IBM53 citations91
US4381818AMay 3, 1983
Porous film heat transfer
IBM54 citations91
US4689656AAug 25, 1987
Method for forming a void free isolation pattern and resulting structure
IBM41 citations89
US4728624AMar 1, 1988
Selective epitaxial growth structure and isolation
IBM14 citations82
US3974003AAug 10, 1976
Chemical vapor deposition of dielectric films containing Al, N, and Si
IBM22 citations78
US4908691AMar 13, 1990
Selective epitaxial growth structure and isolation
IBM5 citations74
US4425574AJan 10, 1984
Buried injector memory cell formed from vertical complementary bipolar transistor circuits and method of fabrication therefor
IBM16 citations74
US4274891AJun 23, 1981
Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition
IBM15 citations74
US5159429AOct 27, 1992
Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same
IBM9 citations72
US4960717AOct 2, 1990
Fabrication of dielectrically isolated integrated circuit devices
IBM2 citations63