Inventor

KAO DAVID Y

US35 patents

Patents

35 patents

US5905280AMay 18, 1999

Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures

MICRON TECHNOLOGY INC38 citations96

US5854501ADec 29, 1998

Floating gate semiconductor device having a portion formed with a recess

MICRON TECHNOLOGY INC69 citations96

US6175129B1Jan 16, 2001

Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures

MICRON TECHNOLOGY INC31 citations93

US6124167ASep 26, 2000

Method for forming an etch mask during the manufacture of a semiconductor device

MICRON TECHNOLOGY INC19 citations93

US5763916AJun 9, 1998

Vertical bipolar SRAM cell, array and system, and a method for making the cell and the array

MICRON TECHNOLOGY INC20 citations92

US6184086B1Feb 6, 2001

Method for forming a floating gate semiconductor device having a portion within a recess

MICRON TECHNOLOGY INC43 citations92

US6144068ANov 7, 2000

Transistor device structures, and methods for forming such structures

MICRON TECHNOLOGY INC20 citations92

US5896313AApr 20, 1999

Vertical bipolar SRAM cell, array and system, and a method of making the cell and the array

MICRON TECHNOLOGY INC29 citations92

US5811338ASep 22, 1998

Method of making an asymmetric transistor

MICRON TECHNOLOGY INC31 citations92

US6713348B2Mar 30, 2004

Method for forming an etch mask during the manufacture of a semiconductor device

MICRON TECHNOLOGY INC5 citations74

US6504211B1Jan 7, 2003

Circuit for device isolation

MICRON TECHNOLOGY INC4 citations74

US6414869B1Jul 2, 2002

Quad in-line memory module

MICRON TECHNOLOGY INC8 citations74

US6288885B1Sep 11, 2001

Method and apparatus for electrostatic discharge protection for printed circuit boards

MICRON TECHNOLOGY INC14 citations74

US6177328B1Jan 23, 2001

Methods of forming capacitors methods of forming DRAM cells, and integrated circuits incorporating structures and DRAM cell structures

MICRON TECHNOLOGY INC9 citations74

US6124173ASep 26, 2000

Method for improved storage node isolation

MICRON TECHNOLOGY INC6 citations74

US6108228AAug 22, 2000

Quad in-line memory module

MICRON TECHNOLOGY INC7 citations74

US6063673AMay 16, 2000

Transistor device structures, and methods for forming such structures

MICRON TECHNOLOGY INC6 citations74

US5955760ASep 21, 1999

Transistor device structures

MICRON TECHNOLOGY INC6 citations74

US7151659B2Dec 19, 2006

Gapped-plate capacitor

MICRON TECHNOLOGY INC3 citations72

US6774421B2Aug 10, 2004

Gapped-plate capacitor

MICRON TECHNOLOGY INC4 citations72

US6498363B1Dec 24, 2002

Gapped-plate capacitor

MICRON TECHNOLOGY INC3 citations72

US6316326B1Nov 13, 2001

Gapped-plate capacitor

MICRON TECHNOLOGY INC3 citations72

US6018175AJan 25, 2000

Gapped-plate capacitor

MICRON TECHNOLOGY INC6 citations72

US7259442B2Aug 21, 2007

Selectively doped trench device isolation

MICRON TECHNOLOGY INC3 citations63

US6479861B1Nov 12, 2002

Method for forming an etch mask during the manufacture of a semiconductor device

MICRON TECHNOLOGY INC1 citations63

US6465314B1Oct 15, 2002

Semiconductor processing methods

MICRON TECHNOLOGY INC3 citations63

US6165856ADec 26, 2000

Using an organic layer as an ion implantation mask when forming shallow source/drain region

MICRON TECHNOLOGY INC4 citations63

US5907503AMay 25, 1999

Vertical bipolar SRAM cell, array and system, and a method for making the cell and the array

MICRON TECHNOLOGY INC4 citations63

US6958901B2Oct 25, 2005

Gapped-plate capacitor

MICRON TECHNOLOGY INC1 citations61

US6316312B2Nov 13, 2001

Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures

MICRON TECHNOLOGY INC0 citations52

US6232190B1May 15, 2001

Method of forming junction diodes

MICRON TECHNOLOGY INC0 citations52

KAO DAVID Y

Patents

Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures

Floating gate semiconductor device having a portion formed with a recess

Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures

Method for forming an etch mask during the manufacture of a semiconductor device

Structure and method for improved storage node isolation

Selectively doped trench device isolation

Container structure for floating gate memory device and method for forming same

Container structure for floating gate memory device and method for forming same

Vertical bipolar SRAM cell, array and system, and a method for making the cell and the array

Method for forming a floating gate semiconductor device having a portion within a recess

Transistor device structures, and methods for forming such structures

Vertical bipolar SRAM cell, array and system, and a method of making the cell and the array

Method of making an asymmetric transistor

Method for forming an etch mask during the manufacture of a semiconductor device

Circuit for device isolation

Quad in-line memory module

Method and apparatus for electrostatic discharge protection for printed circuit boards

Methods of forming capacitors methods of forming DRAM cells, and integrated circuits incorporating structures and DRAM cell structures

Method for improved storage node isolation

Quad in-line memory module

Transistor device structures, and methods for forming such structures

Transistor device structures

Gapped-plate capacitor

Gapped-plate capacitor

Gapped-plate capacitor

Gapped-plate capacitor

Gapped-plate capacitor

Selectively doped trench device isolation

Method for forming an etch mask during the manufacture of a semiconductor device

Semiconductor processing methods

Using an organic layer as an ion implantation mask when forming shallow source/drain region

Vertical bipolar SRAM cell, array and system, and a method for making the cell and the array

Gapped-plate capacitor

Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures

Method of forming junction diodes