Inventor
LIAO SIMON H
US28 patents
⚠️ This page may combine multiple inventors who share the name “LIAO SIMON H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HEADWAY TECHNOLOGIES INC
17 patentsUS7262941B2Aug 28, 2007
FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
HEADWAY TECHNOLOGIES INC108 citations98
US6773515B2Aug 10, 2004
FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
HEADWAY TECHNOLOGIES INC120 citations98
US6466418B1Oct 15, 2002
Bottom spin valves with continuous spacer exchange (or hard) bias
HEADWAY TECHNOLOGIES INC114 citations98
US6292336B1Sep 18, 2001
Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient
HEADWAY TECHNOLOGIES INC116 citations98
US7180712B1Feb 20, 2007
Shield structure design to improve the stability of an MR head
HEADWAY TECHNOLOGIES INC37 citations93
US6754048B2Jun 22, 2004
Multiple magnetoresistive (MR) layer sensor element having longitudinal bias layers with non-parallel magnetizations
HEADWAY TECHNOLOGIES INC20 citations93
US6581272B1Jun 24, 2003
Method for forming a bottom spin valve magnetoresistive sensor element
HEADWAY TECHNOLOGIES INC24 citations93
US6396671B1May 28, 2002
Ruthenium bias compensation layer for spin valve head and process of manufacturing
HEADWAY TECHNOLOGIES INC19 citations90
US6310751B1Oct 30, 2001
Anti-parallel longitudinal patterned exchange biased dual stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof
HEADWAY TECHNOLOGIES INC18 citations84
US6909583B2Jun 21, 2005
FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures
HEADWAY TECHNOLOGIES INC8 citations74
US6630248B1Oct 7, 2003
Synthetic anti-parallel/parallel/pinned layer spin valve
HEADWAY TECHNOLOGIES INC12 citations74
US6620530B1Sep 16, 2003
Synthetic anti-parallel spin valve, having improved robustness, and process to manufacture it
HEADWAY TECHNOLOGIES INC12 citations74
US6590751B1Jul 8, 2003
Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient
HEADWAY TECHNOLOGIES INC10 citations74
US6392853B1May 21, 2002
Spin valve structure design with laminated free layer
HEADWAY TECHNOLOGIES INC13 citations74
US6308400B1Oct 30, 2001
Method for achieving anti-parallel exchange coupling with one biased layer having low coercivity
HEADWAY TECHNOLOGIES INC9 citations74
US6295718B1Oct 2, 2001
Method for fabricating a non-parallel magnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor element
HEADWAY TECHNOLOGIES INC6 citations74
US6697233B2Feb 24, 2004
High density recording, dual stripe MR (DSMR) head for achieving anti-parallel exchange coupling with one biased layer having low coercivity
HEADWAY TECHNOLOGIES INC3 citations63
HGST Netherlands BV
4 patentsUS8749926B1Jun 10, 2014
Scissor magnetic read head with wrap-around magnetic shield
HGST Netherlands BV36 citations94
US8941954B2Jan 27, 2015
Magnetic sensor with extended pinned layer and partial wrap around shield
HGST Netherlands BV13 citations84
US9202482B2Dec 1, 2015
Magnetic sensor having an extended pinned layer with stitched antiferromagnetic pinning layer
HGST Netherlands BV2 citations63
US8842395B2Sep 23, 2014
Magnetic sensor having an extended pinned layer and shape enhanced bias structure
HGST Netherlands BV3 citations63