P

Inventor

BAENISCH ANDREAS

DE15 patents

Patents

15 patents
US10291194B2May 14, 2019

System and method for biasing an RF circuit

INFINEON TECHNOLOGIES AG13 citations82
US6900516B1May 31, 2005

Semiconductor fuse device

INFINEON TECHNOLOGIES AG14 citations78
US6515374B1Feb 4, 2003

Contact connection of metal interconnects of an integrated semiconductor chip

INFINEON TECHNOLOGIES AG11 citations71
US11515302B2Nov 29, 2022

Circuit including configuration terminal and method

INFINEON TECHNOLOGIES AG0 citations62
US7427202B2Sep 23, 2008

Means of mounting for electronic components, arrangement and procedure

INFINEON TECHNOLOGIES AG4 citations62
US11921666B2Mar 5, 2024

Method for MIPI RFFE address assignment and MIPI RFFE device

INFINEON TECHNOLOGIES AG0 citations61
US12438455B2Oct 7, 2025

Regulated charge pump with adaptive drive strength

INFINEON TECHNOLOGIES AG0 citations60
US11936293B2Mar 19, 2024

Regulated charge pump with adaptive drive strength

INFINEON TECHNOLOGIES AG0 citations60
US6819627B2Nov 16, 2004

Method for storing data, method for reading data, apparatus for storing data and apparatus for reading data

INFINEON TECHNOLOGIES AG4 citations59
US6583508B2Jun 24, 2003

Integrated circuit with active regions having varying contact arrangements

INFINEON TECHNOLOGIES AG0 citations50
US7237211B2Jun 26, 2007

Method for reducing the evaluation outlay in the monitoring of layout changes for semiconductor chips

INFINEON TECHNOLOGIES AG0 citations49
US6603170B2Aug 5, 2003

Integrated semiconductor configuration having a semiconductor memory with user programmable bit width

INFINEON TECHNOLOGIES AG0 citations45
US6859398B2Feb 22, 2005

Semiconductor memory component

INFINEON TECHNOLOGIES AG0 citations41
US6724667B2Apr 20, 2004

Data memory with redundant memory cells used for buffering a supply voltage

INFINEON TECHNOLOGIES AG0 citations39
US6613616B2Sep 2, 2003

Method for fabricating field-effect transistors in integrated semiconductor circuits and integrated semiconductor circuit fabricated with a field-effect transistor of this type including a dual gate

INFINEON TECHNOLOGIES AG0 citations30